Semiconductors, Diodes, Diodes - Rectifiers - Arrays Nexperia USA Inc. 225mA (DC)

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 3
  • BAS21GWJ
    DIODE GEN PURP 200V 225MA SOD123
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SOD-123
    • Supplier Device Package: SOD-123
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 225mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • BAS21GWX
    DIODE GEN PURP 200V 225MA SOD123
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SOD-123
    • Supplier Device Package: SOD-123
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 225mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • BAS21W,115
    DIODE GEN PURP 250V 225MA SOT323
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 250V
    • Current - Average Rectified (Io): 225mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • 50
  • 100