- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSM580JE3/TR13 | DIODE SCHOTTKY 80V 5A DO214AB | Microsemi Corporation | DO-214AB, SMC | 5A | Schottky | Surface Mount | DO-214AB | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 80V | 800mV @ 5A | 80V | -55°C ~ 175°C | |||||
| HSM880JE3/TR13 | DIODE SCHOTTKY 80V 8A DO214AB | Microsemi Corporation | DO-214AB, SMC | 8A | Schottky | Surface Mount | DO-214AB | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 80V | 780mV @ 8A | 80V | -55°C ~ 175°C | |||||
| APT60DQ120LCTG | DIODE ARRAY GP 1200V 60A TO264 | Microsemi Corporation | TO-264-3, TO-264AA | Standard | Through Hole | TO-264 [L] | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1200V | 3.3V @ 60A | 1200V | 320ns | -55°C ~ 175°C | 1 Pair Common Cathode | 60A | |||
| JAN1N3647 | DIODE GEN PURP 3KV 250MA AXIAL | Microsemi Corporation | S, Axial | 250mA | Standard | Through Hole | S, Axial | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 1500V | 5V @ 250mA | 3000V | -65°C ~ 150°C | Military, MIL-PRF-19500/279 | ||||
| 5822SMJE3/TR13 | DIODE SCHOTTKY 40V 3A SMCJ | Microsemi Corporation | DO-214AB, SMC | 3A | Schottky | Surface Mount | SMCJ (DO-214AB) | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 40V | 500mV @ 3A | 40V | -55°C ~ 150°C | |||||
| CPT50145 | DIODE MODULE 45V 250A 2TOWER | Microsemi Corporation | MD3CC | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 12mA @ 45V | 550mV @ 250A | 45V | 1 Pair Common Cathode | 250A | |||||
| JANTX1N483B | DIODE GEN PURP 70V 200MA DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | 200mA | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 25nA @ 70V | 1V @ 100mA | 70V | -65°C ~ 175°C | Military, MIL-PRF-19500/118 | ||||
| MSCD200-08 | DIODE MODULE 800V 200A SD2 | Microsemi Corporation | D2 | Standard | Chassis Mount | SD2 | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 800V | 1.3V @ 300A | 800V | 1 Pair Series Connection | 200A | |||||
| 1N3645 | DIODE GEN PURP 1.4KV 250MA AXIAL | Microsemi Corporation | S, Axial | 250mA | Standard | Through Hole | S, Axial | Standard Recovery >500ns, > 200mA (Io) | 100µA @ 1400V | 5V @ 250mA | 1400V | -65°C ~ 175°C | |||||
| 1N1206 | STANDARD RECTIFIER | Microsemi Corporation | |||||||||||||||
| JANTX1N6074 | DIODE GEN PURP 100V 850MA AXIAL | Microsemi Corporation | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |||
| R3820 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| 1N1199B | STANDARD RECTIFIER | Microsemi Corporation | |||||||||||||||
| CPT12050 | DIODE MODULE 50V 60A TO244AB | Microsemi Corporation | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 50V | 800mV @ 120A | 50V | 1 Pair Common Cathode | 60A | |||||
| DSB0.5A30 | DIODE SCHOTTKY 30V 500MA DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | 500mA | Schottky | Through Hole | DO-35 | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 30V | 60pF @ 0V, 1MHz | 650mV @ 500mA | 30V | -65°C ~ 125°C |
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