• Manufacturer
  • Current - Average Rectified (Io)
Found: 3029
  • DIODE GEN PURP 880V 1A D5A
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/585
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 880V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 500nA @ 880V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE SCHOTTKY 40V 200MA DO213AA
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: DO-213AA
    • Supplier Device Package: DO-213AA
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 40V
    • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 125°C
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  • SCHOTTKY DIODE
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE GEN PURP 50V 2A G-MELF
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, G
    • Supplier Device Package: G-MELF (D-5C)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 2A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE MODULE 800V 60A
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 80ns
    • Current - Reverse Leakage @ Vr: 30µA @ 800V
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 60A
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  • DIODE GEN PURP 400V 1.75A E-MELF
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • STANDARD RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE MODULE 800V 70A TO249
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Screw Mount
    • Package / Case: TO-249AA Isolated Base
    • Supplier Device Package: TO-249
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 70A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 800V
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 70A
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  • DIODE GEN PURP 1KV 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 1µA @ 1000V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • STANDARD RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE GEN PURP 300V 3A DO215AB
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: DO-215AB, SMC Gull Wing
    • Supplier Device Package: DO-215AB
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 300V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 300V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 400V 1A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/286
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 5µs
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • STANDARD RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE ARRAY GP 1000V 60A TO264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 280ns
    • Current - Reverse Leakage @ Vr: 250µA @ 1000V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 60A
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