- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR4080PTE3/TU | DIODE SCHOTTKY 40A 80V TO-247AD | Microsemi Corporation | |||||||||||||||
| 1N1346B | STANDARD RECTIFIER | Microsemi Corporation | |||||||||||||||
| R20410 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| 5819SMGE3/TR13 | DIODE SCHOTTKY 40V 1A DO215AA | Microsemi Corporation | DO-215AA, SMB Gull Wing | 1A | Schottky | Surface Mount | DO-215AA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 550mV @ 1A | 40V | -55°C ~ 150°C | |||||
| 1N1353A | STANDARD RECTIFIER | Microsemi Corporation | |||||||||||||||
| 1N5195 | DIODE GEN PURP 180V 200MA DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | 200mA | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 25nA @ 180V | 1V @ 100mA | 180V | -65°C ~ 175°C | |||||
| LSM345G/TR13 | DIODE SCHOTTKY 45V 3A DO215AB | Microsemi Corporation | DO-215AB, SMC Gull Wing | 3A | Schottky | Surface Mount | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 45V | 520mV @ 3A | 45V | -55°C ~ 150°C | |||||
| LSM115JE3/TR13 | DIODE SCHOTTKY 15V 1A DO214BA | Microsemi Corporation | DO-214BA | 1A | Schottky | Surface Mount | DO-214BA | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 15V | 220mV @ 1A | 15V | -55°C ~ 150°C | |||||
| CPT50060 | DIODE MODULE 60V 250A 2TOWER | Microsemi Corporation | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 8mA @ 60V | 730mV @ 250A | 60V | 1 Pair Common Cathode | 250A | |||||
| JANTX1N5807URS | DIODE GEN PURP 50V 3A BPKG | Microsemi Corporation | SQ-MELF, B | 3A | Standard | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 60pF @ 10V, 1MHz | 875mV @ 4A | 50V | 30ns | Military, MIL-PRF-19500/477 | |||
| S30720 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| CPT500100 | DIODE MODULE 100V 250A TO244AB | Microsemi Corporation | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 8mA @ 100V | 900mV @ 250A | 100V | 1 Pair Common Cathode | 250A | |||||
| UFT12520D | DIODE MODULE 200V 60A | Microsemi Corporation | Module | Standard | Chassis Mount | Module | Fast Recovery =< 500ns, > 200mA (Io) | 30µA @ 200V | 975mV @ 60A | 200V | 40ns | 1 Pair Series Connection | 60A | ||||
| UPR5/TR7 | DIODE GEN PURP 50V 2.5A DO216 | Microsemi Corporation | DO-216AA | 2.5A | Standard | Surface Mount | DO-216 | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 50V | 975mV @ 2A | 50V | 25ns | -55°C ~ 150°C | ||||
| 1N646 | SILICON SWITCHING DIODES | Microsemi Corporation |
- 10
- 15
- 50
- 100