Diodes - Rectifiers - Arrays Microchip Technology 1A | Diodes

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Found: 598

JANTXV1N5620/TR

STD RECTIFIER

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/427
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Operating Temperature - Junction: -65°C ~ 200°C
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LSM150GE3/TR13

DIODE SCHOTTKY 50V 1A DO215AA

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-215AA, SMB Gull Wing
- Supplier Device Package: DO-215AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
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JANS1N5623US

RECTIFIER DIODE

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/429
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Diode Type: Standard
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Operating Temperature - Junction: -65°C ~ 175°C
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JAN1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/427
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Operating Temperature - Junction: -65°C ~ 200°C
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JANTXV1N5804US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N4248

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/286
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Operating Temperature - Junction: -65°C ~ 175°C
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JAN1N5614/TR

STD RECTIFIER

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/427
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Operating Temperature - Junction: -65°C ~ 200°C
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JAN1N4944/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/360
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -65°C ~ 175°C
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1N5806USE3/TR

UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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UFS150JE3/TR13

DIODE GEN PURP 500V 1A DO214BA

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 500V
- Operating Temperature - Junction: -55°C ~ 175°C
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JANS1N5802US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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1N5614US

DIODE GEN PURP 200V 1A D5A

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Operating Temperature - Junction: -65°C ~ 200°C
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1N5805/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 125V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 125°C
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UPS5819E3/TR13

DIODE SCHOTTKY 40V 1A POWERMITE1

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite 1 (DO216-AA)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: 60pF @ 5V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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JANTX1N4946/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/359
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Operating Temperature - Junction: -65°C ~ 175°C
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