Found: 598
  • DIODE SCHOTTKY 20V 1A DO213AB
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: DO-213AB, MELF
    • Supplier Device Package: DO-213AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 20V
    • Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
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  • RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/429
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/286
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 5µs
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • DIODE SMALL-SIGNAL SCHOTTKY
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/586
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 60V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 60V
    • Operating Temperature - Junction: -55°C ~ 125°C
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  • DIODE SCHOTTKY 30V 1A DO204AL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-204AL (DO-41)
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 30V
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  • STD RECTIFIER
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 500nA @ 400V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • DIODE SMALL-SIGNAL SCHOTTKY
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: DO-213AB, MELF
    • Supplier Device Package: DO-213AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 50V
    • Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
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  • DIODE GEN PURP 1.1KV 1A D5A
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/585
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1100V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 1µA @ 1100V
    • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE GEN PURP 1KV 1A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/429
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 500nA @ 1000V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • DIODE SMALL-SIGNAL SCHOTTKY
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/586
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 100V
    • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • STD RECTIFIER
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/427
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 500nA @ 400V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • DIODE GEN PURP 400V 1A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/228
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • DIODE GEN PURP 400V 1A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/427
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 500nA @ 400V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • RECTIFIER DIODE
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/429
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 300ns
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • DIODE GEN PURP 1KV 1A D5A
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/429
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 500nA @ 1000V
    • Capacitance @ Vr, F: 15pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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