• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 56
  • JANTXV1N6627US
    DIODE GEN PURP 440V 1.75A D5B
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 440V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 440V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6626U
    DIODE GEN PURP 200V 1.75A A-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6627U
    DIODE GEN PURP 400V 1.75A E-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N6626US
    DIODE GEN PURP 220V 1.75A D5B
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 220V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6626US
    DIODE GEN PURP 220V 1.75A D5B
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 220V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6626UE3
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6628U
    DIODE GEN PURP 600V 1.75A E-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6628/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 660V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 660V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6627US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 440V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 440V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6628
    DIODE GEN PURP 600V 1.75A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 45ns
    • Current - Reverse Leakage @ Vr: 2µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6626US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/578
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 45ns
    • Current - Reverse Leakage @ Vr: 2µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6628US
    DIODE GEN PURP 660V 1.75A A-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: A-MELF
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 660V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 660V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6626
    DIODE GEN PURP 220V 1.75A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 220V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6626/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 220V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6626US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: A-MELF
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 1.75A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 2µA @ 220V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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