- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| R3250 | STD RECTIFIER | Microchip Technology | |||||||||||||||
| 1N1345C | STANDARD RECTIFIER | Microchip Technology | |||||||||||||||
| JAN1N5711UBCC | SCHOTTKY DIODE | Microchip Technology | 4-SMD, No Lead | Schottky | Surface Mount | UB | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 2pF @ 0V, 1MHz | 1V @ 15mA | 50V | -65°C ~ 150°C | Military, MIL-PRF-19500/444 | ||||
| 1N4153/TR | SIGNAL OR COMPUTER DIODE | Microchip Technology | |||||||||||||||
| 1N4500E3 | SIGNAL OR COMPUTER DIODE | Microchip Technology | |||||||||||||||
| MSASC100W100HR | RECTIFIER | Microchip Technology | ThinKey™1 | 100A | Schottky | Surface Mount | ThinKey™1 | Fast Recovery =< 500ns, > 200mA (Io) | 950 mV @ 80 A | 100V | -65°C ~ 175°C | ||||||
| JANTXV1N6872UTK2 | POWER SCHOTTKY | Microchip Technology | |||||||||||||||
| R306100F | STD RECTIFIER | Microchip Technology | |||||||||||||||
| 1N2443 | STD RECTIFIER | Microchip Technology | |||||||||||||||
| R306010F | STD RECTIFIER | Microchip Technology | |||||||||||||||
| 1N4944 | DIODE GEN PURP 400V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 35pF @ 12V, 1MHz | 1.3V @ 1A | 400V | 150ns | -65°C ~ 175°C | ||||
| JANS1N6642UB/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | 3-SMD, No Lead | Standard | Surface Mount | UB | Fast Recovery =< 500ns, > 200mA (Io) | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 5ns | |||||||
| UPS360E3/TR13 | DIODE SCHOTTKY 60V 3A POWERMITE3 | Microchip Technology | Powermite®3 | 3A | Schottky | Surface Mount | Powermite 3 | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 60V | 130pF @ 4V, 1MHz | 630mV @ 3.5A | 60V | -55°C ~ 125°C | ||||
| 1N5819/TR | SMALL-SIGNAL SCHOTTKY | Microchip Technology | |||||||||||||||
| CD1A40 | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | Die | 1A | Schottky | Surface Mount | Die | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 40V | 600mV @ 1A | 40V | -55°C ~ 125°C |
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