- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/444
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Current - Reverse Leakage @ Vr: 200nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: ThinKey™1
- Supplier Device Package: ThinKey™1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 80 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction: -65°C ~ 175°C
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
- Diode Type: Standard
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5ns
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: Powermite®3
- Supplier Device Package: Powermite 3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 3.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 200µA @ 60V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 125°C
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Operating Temperature - Junction: -55°C ~ 125°C
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- Offers in stock:
- 10
- 15
- 50
- 100