Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 150A (DC)

Found: 10
  • DIODE GEN PURP 600V 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 1.7KV 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1700V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1700V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 600V 150A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 120ns
    • Current - Reverse Leakage @ Vr: 40µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 1.2KV 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 45A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 1.2KV 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 1.2KV 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 600V 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 600V 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • DIODE GEN PURP 1.7KV 150A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1700V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1700V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 650V 150A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 150A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 108ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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