Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 100A

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 2
  • IRD3CH53DB6
    DIODE GEN PURP 1.2KV 100A DIE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A
    • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 270ns
    • Current - Reverse Leakage @ Vr: 2µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • IDC51D120T6MX1SA3
    DIODE GEN PURP 1.2KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A
    • Voltage - Forward (Vf) (Max) @ If: 2.05V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 18µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • 100