• Manufacturer
  • Current - Average Rectified (Io)
Found: 1337
  • DIODE 650V 30A RAPID2 TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Rapid 2
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 32ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 15A
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  • DIODE ARRAY SCHOTTKY 40V SOT323
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, BAT64
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 30V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 120mA
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 0201 (0603 Metric)
    • Supplier Device Package: PG-TSSLP-2-1
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 4V
    • Current - Average Rectified (Io): 110mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 1V
    • Capacitance @ Vr, F: 230pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 650V 8A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 40ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE SCHOTTKY 650V 8A VSON-4
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Surface Mount
    • Package / Case: 4-PowerTSFN
    • Supplier Device Package: PG-VSON-4
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 8A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 140µA @ 650V
    • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE ARRAY SCHOTTKY 70V SOT323
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 70V
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 100ps
    • Current - Reverse Leakage @ Vr: 100nA @ 50V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 70mA (DC)
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 360µA @ 1.2V
    • Capacitance @ Vr, F: 750pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE MODULE 1200V 160A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: DD104N
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  • DIODE ARRAY SCHOTTKY 70V SOT23
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 70V
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 100ps
    • Current - Reverse Leakage @ Vr: 100nA @ 50V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 70mA (DC)
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  • DIODE SCHOTTKY 650V 10A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 180µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 4.2KV 750A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AB, B-PUK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4200V
    • Current - Average Rectified (Io): 750A
    • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 700A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 70mA @ 4200V
    • Operating Temperature - Junction: -40°C ~ 160°C
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  • DIODE MODULE GP 1200V 104A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 20mA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 104A
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  • DIODE ARRAY MOD 1200V 140A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE GEN PURP 4.5KV 1140A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AD
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4500V
    • Current - Average Rectified (Io): 1140A
    • Voltage - Forward (Vf) (Max) @ If: 6V @ 2500A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100mA @ 4500V
    • Operating Temperature - Junction: 0°C ~ 140°C
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 30V
    • Operating Temperature - Junction: 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 120mA
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