• Manufacturer
  • Current - Average Rectified (Io)
Found: 1337
  • RECTIFIER DIODE, 14.7A, 600V
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE MODULE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AE
    • Supplier Device Package: BG-D12035K-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2200V
    • Current - Average Rectified (Io): 6010A
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 4000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 200mA @ 2200V
    • Operating Temperature - Junction: -40°C ~ 160°C
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  • DIODE SCHOTTKY 1200V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 240µA @ 1200V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323-3
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 200mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 25V
    • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
    • Operating Temperature - Junction: 150°C
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  • DIODE GEN PURP 1.4KV 735A MODULE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1400V
    • Current - Average Rectified (Io): 735A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2200A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 1400V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23-3-3
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 25V
    • Operating Temperature - Junction: 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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  • DIODE GEN PURP 3.6KV 475A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 3600V
    • Current - Average Rectified (Io): 475A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 3600V
    • Operating Temperature - Junction: -40°C ~ 160°C
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  • SILICON SWITCHING DIODE ARRAY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 3µA @ 100V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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  • DIODE GEN PURP 2.8KV 820A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AA, A-PUK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2800V
    • Current - Average Rectified (Io): 820A
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 750A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 2800V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • DIODE MODULE GP 1600V 330A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1600V
    • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1600A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 1600V
    • Operating Temperature - Junction: -40°C ~ 130°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 330A
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  • DIODE SCHOTTKY 40V 120MA SCD80-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-80
    • Supplier Device Package: SCD-80
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 120mA
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 30V
    • Capacitance @ Vr, F: 6pF @ 1V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE GEN PURP 2.6KV 1070A MOD
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2600V
    • Current - Average Rectified (Io): 1070A
    • Voltage - Forward (Vf) (Max) @ If: 1.52V @ 3400A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 150mA @ 2600V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • DIODE GEN PURP 600V
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AB, B-PUK
    • Supplier Device Package: BG-D-ELEM-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15130A
    • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100mA @ 600V
    • Operating Temperature - Junction: 180°C (Max)
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  • RECTIFIER DIODE DISC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE ARRAY GP 80V 200MA SOT23
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 150nA @ 70V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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