- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 300pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
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- Manufacturer: Infineon Technologies
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500V
- Current - Average Rectified (Io): 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 4500V
- Operating Temperature - Junction: -40°C ~ 160°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 28A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 42ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Operating Temperature - Junction: -40°C ~ 175°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 125°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 64A
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- Manufacturer: Infineon Technologies
- Series: DD171N
- Mounting Type: Chassis Mount
- Package / Case: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 171A
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 38A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 62µA @ 12V
- Capacitance @ Vr, F: 29pF @ 800V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-7
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Series: DD104N
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 70mA (DC)
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
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- Offers in stock:
- 10
- 15
- 50
- 100