• Manufacturer
  • Current - Average Rectified (Io)
Found: 189
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G3S06520B SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology Co. Ltd TO-247-3 40A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S12003H SIC SCHOTTKY DIODE 1200V 3A 2-PI Global Power Technology Co. Ltd TO-220-2 Full Pack 9A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 100µA @ 1200V 260pF @ 0V, 1MHz 1.7V @ 3A 1200V 0ns -55°C ~ 175°C
G4S06515QT SIC SCHOTTKY DIODE 650V 15A DFN8 Global Power Technology Co. Ltd 4-PowerTSFN 53A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
G3S06510P SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology Co. Ltd TO-247-2 32.8A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S06006J SIC SCHOTTKY DIODE 600V 6A 2-PIN Global Power Technology Co. Ltd TO-220-2 Isolated Tab 21.5A (DC) Silicon Carbide Schottky Through Hole TO-220ISO No Recovery Time > 500mA (Io) 50µA @ 600V 424pF @ 0V, 1MHz 1.7V @ 6A 600V 0ns -55°C ~ 175°C
G3S06508H SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology Co. Ltd TO-220-2 Full Pack 14A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G5S06506AT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology Co. Ltd TO-220-2 24.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G5S12015A SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology Co. Ltd TO-220-2 53A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1370pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G4S06510AT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology Co. Ltd TO-220-2 30.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G4S06515CT SIC SCHOTTKY DIODE 650V 15A 2-PI Global Power Technology Co. Ltd TO-252-3, DPak (2 Leads + Tab), SC-63 35.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
G3S12015P SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology Co. Ltd TO-247-2 42A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1379pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S06530A SIC SCHOTTKY DIODE 650V 30A 2-PI Global Power Technology Co. Ltd TO-220-2 110A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 2150pF @ 0V, 1MHz 1.7V @ 30A 650V 0ns -55°C ~ 175°C
G3S12015H SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology Co. Ltd TO-220-2 Full Pack 21A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 1700pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S06508J SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology Co. Ltd TO-220-2 Isolated Tab 23A (DC) Silicon Carbide Schottky Through Hole TO-220ISO No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G5S06502AT SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology Co. Ltd TO-220-2 9.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 124pF @ 0V, 1MHz 1.5V @ 2A 650V 0ns -55°C ~ 175°C