• Manufacturer
  • Current - Average Rectified (Io)
Found: 189
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G4S06515DT SIC SCHOTTKY DIODE 650V 15A 2-PI Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 38A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
G3S12040B SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 15A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 64.5A (DC)
G4S12010PM SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology Co. Ltd TO-247-2 33.2A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 1200V 0ns -55°C ~ 175°C
G3S06506B SIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 3A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 14A (DC)
G3S12030B SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 15A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 42A (DC)
G5S12010A SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology Co. Ltd TO-220-2 37A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 825pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G4S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 30µA @ 1200V 1.6V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 33.2A (DC)
G5S12008PM SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology Co. Ltd TO-247-2 27.9A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
G3S12050P SIC SCHOTTKY DIODE 1200V 50A 2-P Global Power Technology Co. Ltd TO-247-2 117A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 100µA @ 1200V 7500pF @ 0V, 1MHz 1.8V @ 150A 1200V 0ns -55°C ~ 175°C
G5S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 5A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 19.35A (DC)
G4S06508DT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G5S06508AT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology Co. Ltd TO-220-2 30.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.5V @ 8A 650V 0ns -55°C ~ 175°C
G5S12030BM SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology Co. Ltd TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 15A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 55A (DC)
G3S06004J SIC SCHOTTKY DIODE 600V 4A 2-PIN Global Power Technology Co. Ltd TO-220-2 Isolated Tab 11A (DC) Silicon Carbide Schottky Through Hole TO-220ISO No Recovery Time > 500mA (Io) 50µA @ 600V 181pF @ 0V, 1MHz 1.7V @ 4A 600V 0ns -55°C ~ 175°C
G4S06510CT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology Co. Ltd TO-252-3, DPak (2 Leads + Tab), SC-63 31A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C