• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1782
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
Series
FR12J05 DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 12A Standard Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 100V 800mV @ 12A 600V 500ns -65°C ~ 150°C
MBRT60020L DIODE SCHOTTKY 20V 300A 3 TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 20V 580mV @ 300A 20V -55°C ~ 150°C 1 Pair Common Cathode 300A
MURF10005R DIODE MODULE 50V 50A TO244 GeneSiC Semiconductor TO-244AB Standard Chassis Mount TO-244 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 50A 50V 75ns -55°C ~ 150°C 1 Pair Common Anode 50A
S40Q DIODE GEN PURP 1.2KV 40A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 40A Standard Chassis, Stud Mount DO-5 Standard Recovery >500ns, > 200mA (Io) 10µA @ 100V 1.1V @ 40A 1200V -65°C ~ 190°C
GB01SLT12-252 DIODE SILICON 1.2KV 1A TO252 GeneSiC Semiconductor TO-252-3, DPak (2 Leads + Tab), SC-63 1A Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 2µA @ 1200V 69pF @ 1V, 1MHz 1.8V @ 1A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
MBR400150CT DIODE SCHOTTKY 150V 200A 2 TOWER GeneSiC Semiconductor Twin Tower Schottky Chassis Mount Twin Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 150V 880mV @ 200A 150V -55°C ~ 150°C 1 Pair Common Cathode 200A
MBRTA40030RL DIODE SCHOTTKY 30V 200A 3TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 30V 580mV @ 200A 30V -55°C ~ 150°C 1 Pair Common Anode 200A
FR12B02 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 12A Standard Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 100V 800mV @ 12A 100V 200ns -65°C ~ 150°C
FST8335M DIODE MODULE 35V 80A D61-3M GeneSiC Semiconductor D61-3M Schottky Chassis Mount D61-3M Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 20V 650mV @ 80A 35V -55°C ~ 150°C 1 Pair Common Cathode 80A (DC)
MURH7060R DIODE GEN PURP 600V 70A D-67 GeneSiC Semiconductor D-67 70A Standard Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 600V 1.7V @ 70A 600V 110ns -55°C ~ 150°C
MBRH12045R DIODE SCHOTTKY 45V 120A D-67 GeneSiC Semiconductor D-67 HALF-PAK 120A Schottky, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 45V 700mV @ 120A 45V -55°C ~ 150°C
S40G DIODE GEN PURP 400V 40A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 40A Standard Chassis, Stud Mount DO-5 Standard Recovery >500ns, > 200mA (Io) 10µA @ 100V 1.1V @ 40A 400V -65°C ~ 190°C
MSRT150120(A) DIODE MODULE 1.2KV 150A 3TOWER GeneSiC Semiconductor Three Tower Standard Chassis Mount Three Tower Standard Recovery >500ns, > 200mA (Io) 10µA @ 600V 1.2V @ 150A 1200V 1 Pair Common Cathode 150A (DC)
GD15MPS17H 1700V 15A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor TO-247-2 36A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 20µA @ 1700V 1.082nF @ 1V, 1MHz 1.8V @ 15A 1700V 0ns -55°C ~ 175°C SiC Schottky MPS™
MBRTA800150R DIODE SCHOTTKY 150V 400A 3TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 150V 880mV @ 400A 150V -55°C ~ 150°C 1 Pair Common Anode 400A
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