• Manufacturer
  • Current - Average Rectified (Io)
Found: 1782
  • DIODE SCHOTTKY 200V 150A 3 TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE MODULE 200V 50A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 50A
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  • DIODE MODULE 45V 200A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 45V
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5mA @ 20V
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 200A (DC)
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  • DIODE MODULE 600V 500A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 25µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 500A (DC)
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  • DIODE GEN PURP REV 1.6KV 70A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 1600V
    • Current - Average Rectified (Io): 70A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE MODULE 100V 150A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 8mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE MODULE 200V 150A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 90ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE SCHOTTKY 20V 300A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10mA @ 20V
    • Operating Temperature - Junction: -40°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 300A
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  • DIODE MODULE 20V 120A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 3mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 120A (DC)
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  • DIODE SCHOTTKY 80V 60A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 80V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 60A
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  • DIODE MODULE 100V 100A TO249AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-249AB
    • Supplier Device Package: TO-249AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 2mA @ 20V
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 100A
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  • DIODE MODULE 400V 50A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 50A
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  • DIODE GEN PURP 1KV 100A DO205
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Supplier Device Package: DO-205AA (DO-8)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 100A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 11mA @ 1000V
    • Operating Temperature - Junction: -40°C ~ 200°C
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  • DIODE SCHOTTKY 35V 100A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 35V
    • Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 35V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 100A
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  • DIODE SCHOTTKY 100V 250A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 100V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 250A
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