• Manufacturer
  • Current - Average Rectified (Io)
Found: 1782
  • DIODE GEN PURP 400V 150A DO205AA
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Supplier Device Package: DO-205AA (DO-8)
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 150A
    • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 35mA @ 400V
    • Operating Temperature - Junction: -40°C ~ 200°C
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  • DIODE MODULE 30V 150A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 8mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE GEN PURP 1.2KV 95A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 95A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10mA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • DIODE GEN PURP 150V 60A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 60A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • DIODE SCHOTTKY 35V 150A D-67
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: D-67
    • Supplier Device Package: D-67
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 35V
    • Current - Average Rectified (Io): 150A
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 3mA @ 35V
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  • DIODE SCHOTTKY 200V 60A TO249AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-249AB
    • Supplier Device Package: TO-249AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 60A
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  • DIODE GEN PURP 50V 150A TO244
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • DIODE MODULE 100V 250A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 250A
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  • DIODE SCHOTTKY 150V 250A 3 TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 150V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 250A
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  • DIODE SCHOTTKY REV 60V DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 60V
    • Current - Average Rectified (Io): 75A
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 60V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP REV 600V 85A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 85A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -40°C ~ 125°C
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  • DIODE GEN PURP REV 200V 16A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE GEN PURP 400V 30A SOT227
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 25µA @ 400V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 2 Independent
    • Current - Average Rectified (Io) (per Diode): 30A
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  • DIODE ARRAY GP 200V 50A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 50A
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  • DIODE ARRAY GP REV POLAR3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 90ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 50A
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