- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FR16KR05 | DIODE GEN PURP REV 800V 16A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1.1V @ 16A | 800V | 500ns | -65°C ~ 150°C | ||||
| MBRF300100R | DIODE SCHOTTKY 100V 150A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 150A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | ||||
| FR6MR05 | DIODE GEN PURP REV 1KV 6A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 6A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 6A | 1000V | 500ns | -65°C ~ 150°C | ||||
| MSRTA300160(A)D | DIODE MODULE 1.6KV 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 200V | 1.2V @ 300A | 1600V | -55°C ~ 150°C | 1 Pair Series Connection | 300A (DC) | ||||
| MBRTA60020RL | DIODE SCHOTTKY 20V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 300A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | ||||
| GC08MPS12-220 | SIC DIODE 1200V 8A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 43A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 7µA @ 1200V | 545pF @ 1V, 1MHz | 1.8V @ 8A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ | ||
| MBR120100CT | DIODE MODULE 100V 120A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 840mV @ 60A | 100V | 1 Pair Common Anode | 120A (DC) | |||||
| MBR120200CTR | DIODE SCHOTTKY 200V 60A 2 TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 60A | 200V | -55°C ~ 150°C | 1 Pair Common Anode | 60A | ||||
| GD2X50MPS12N | 1200V 100A SOT-227 SIC SCHOTTKY | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 15µA @ 1200V | 1.8V @ 50A | 1200V | 0ns | -55°C ~ 175°C | 2 Independent | 76A (DC) | SiC Schottky MPS™ | ||
| MBR6080 | DIODE SCHOTTKY 80V 60A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 60A | 80V | -65°C ~ 150°C | |||||
| MURTA30060R | DIODE GEN PURP 600V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 150A | 600V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | ||||
| S300Z | DIODE GEN PURP 2KV 300A DO205 | GeneSiC Semiconductor | DO-205AB, DO-9, Stud | 300A | Standard | Chassis, Stud Mount | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1600V | 1.2V @ 300A | 2000V | -60°C ~ 180°C | |||||
| MUR2X060A12 | DIODE GEN PURP 1.2KV 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 1200V | 2.35V @ 60A | 1200V | -55°C ~ 175°C | 2 Independent | 60A | ||||
| 1N1189 | DIODE GEN PURP 600V 35A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 35A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.2V @ 35A | 600V | -65°C ~ 190°C | |||||
| GD10MPS12E | 1200V 10A TO-252-2 SIC SCHOTTKY | GeneSiC Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 29A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 5µA @ 1200V | 367pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
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