- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C3D10065I | DIODE SCHOTTKY 650V 10A TO220-2 | Cree/Wolfspeed | TO-220-2 Isolated Tab | 19A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 Isolated Tab | No Recovery Time > 500mA (Io) | 50µA @ 650V | 480pF @ 0V, 1MHz | 650V | 0ns | -55°C ~ 175°C | Z-Rec® | |||
| CPW2-1200-S010B-SK | DIODE SCHOTTKY 1200V 10A | Cree/Wolfspeed | |||||||||||||||
| C3D08065A | DIODE SCHOTTKY 650V 8A TO220-2 | Cree/Wolfspeed | TO-220-2 | 24A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 60µA @ 650V | 441pF @ 0V, 1MHz | 1.8V @ 8A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C3D10060A | DIODE SCHOTTKY 600V 10A TO220-2 | Cree/Wolfspeed | TO-220-2 | 30A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 600V | 480pF @ 0V, 1MHz | 1.8V @ 10A | 600V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C3D08065E | DIODE SCHOTTKY 650V 25.5A TO252 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.8V @ 8A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C4D02120E-TR | DIODE SCHOTTKY 1.2KV 9A TO252-2 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 167pF @ 0V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C3D02060E-TR | DIODE SCHOTTKY 600V 8A TO252-2 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 11pF @ 400V, 1MHz | 1.7V @ 2A | 600V | -55°C ~ 175°C | Z-Rec® | |||
| C6D10065A | 10A 650V G6 ZREC SIC SCHOTTKY DI | Cree/Wolfspeed | TO-220-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 611pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| E4D10120A | E SERIES, 10 AMP, 1200V G4 SCHOT | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 200µA @ 1200V | 777pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | -55°C ~ 175°C | Automotive, AEC-Q101, E | |||
| C3D02065E | DIODE SCHOTTKY 650V 2A TO252-2 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 120pF @ 0V, 1MHz | 1.8V @ 2A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C4D10120A | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® | ||
| C3D16065D1 | DIODE SCHOTTKY 650V 16A TO247-3 | Cree/Wolfspeed | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 95µA @ 650V | 1.8V @ 16A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® |
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