• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 38
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
CDBD620-G DIODE SCHOTTKY 20V 6A SMD Comchip Technology TO-252-3, DPak (2 Leads + Tab), SC-63 6A Schottky Surface Mount DPAK Fast Recovery =< 500ns, > 200mA (Io) 500µA @ 20V 550mV @ 6A 20V -55°C ~ 125°C
6A08-G DIODE GEN PURP 800V 6A R6 Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 10µA @ 800V 100pF @ 4V, 1MHz 1V @ 6A 800V -55°C ~ 125°C
FR605T-G RECTIFIER FAST RECOVERY 600V 6A Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 100pF @ 4V, 1MHz 1.3V @ 6A 600V 250ns -55°C ~ 150°C
FR607T-G RECTIFIER FAST RECOVERY 1000V 6A Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 1000V 100pF @ 4V, 1MHz 1.3V @ 6A 1000V 500ns -55°C ~ 150°C
6A02-G DIODE GEN PURP 200V 6A R6 Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 10µA @ 200V 100pF @ 4V, 1MHz 1V @ 6A 200V -55°C ~ 125°C
6A04-G DIODE GEN PURP 400V 6A P600 Comchip Technology P600, Axial 6A Standard Through Hole P600 Standard Recovery >500ns, > 200mA (Io) 5µA @ 400V 100pF @ 4V, 1MHz 1.1V @ 6A 400V -55°C ~ 125°C
6A10B-G DIODE GEN PURP 1KV 6A R6 Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 10µA @ 1000V 100pF @ 4V, 1MHz 1V @ 6A 1000V -55°C ~ 125°C
6A10-G DIODE GEN PURP 1KV 6A R6 Comchip Technology R-6, Axial 6A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 10µA @ 1000V 100pF @ 4V, 1MHz 1V @ 6A 1000V -55°C ~ 125°C
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