-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CURC307-G | DIODE GEN PURP 1KV 3A DO214AB | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 1000V | 1.7V @ 3A | 1000V | 75ns | 150°C (Max) | ||
SS315B-HF | DIODE SCHOTTKY 3A 150V SMB | Comchip Technology | DO-214AA, SMB | 3A | Schottky | Surface Mount | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 150V | 400pF @ 4V, 1MHz | 950mV @ 3A | 150V | -55°C ~ 150°C | ||
SS310F-HF | DIODE SCHOTTKY 3A 100V SMAF | Comchip Technology | DO-214AC, SMA | 3A | Schottky | Surface Mount | SMAF | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 100V | 180pF @ 4V, 1MHz | 850mV @ 3A | 100V | -55°C ~ 150°C | ||
CSFC304-G | DIODE GEN PURP 400V 3A DO214AB | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 1.25V @ 3A | 400V | 35ns | 150°C (Max) | ||
ACGRBT302-HF | DIODE GEN PURP 400V 3A 2114 | Comchip Technology | 2-SMD, No Lead | 3A | Standard | Surface Mount | 2114/DO-214AA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 23pF @ 4V, 1MHz | 1V @ 3A | 400V | -65°C ~ 175°C | Automotive, AEC-Q101 | |
US3AC-HF | RECTIFIER ULTRA FAST RECOVERY 50 | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 1V @ 3A | 50V | 50ns | -55°C ~ 150°C | ||
CGRC307-G | DIODE GEN PURP 1KV 3A DO214AB | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 1000V | 1.1V @ 3A | 1000V | 150°C (Max) | |||
UF3004-G | DIODE GEN PURP 300V 3A DO201AA | Comchip Technology | DO-201AA, DO-27, Axial | 3A | Standard | Through Hole | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 300V | 50pF @ 4V, 1MHz | 1.3V @ 3A | 300V | 50ns | -55°C ~ 125°C | |
CDBB360-HF | DIODE SCHOTTKY 60V 3A DO214AA | Comchip Technology | DO-214AA, SMB | 3A | Schottky | Surface Mount | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 60V | 250pF @ 4V, 1MHz | 700mV @ 3A | 60V | -50°C ~ 150°C | ||
SS320BF-HF | DIODE SCHOTTKY 3A 200V SMBF | Comchip Technology | DO-221AA, SMB Flat Leads | 3A | Schottky | Surface Mount | SMBF | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 200V | 400pF @ 4V, 1MHz | 950mV @ 3A | 200V | -55°C ~ 150°C | ||
CSFC302-G | DIODE GEN PURP 100V 3A DO214AB | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 100V | 950mV @ 3A | 100V | 35ns | 150°C (Max) | ||
S3DC-HF | RECTIFIER GEN PURP 200V 3A SMC | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 200V | 40pF @ 4V, 1MHz | 1V @ 3A | 200V | -55°C ~ 150°C | ||
ES3CC-HF | RECTIFIER SUPER FAST RECOVERY 15 | Comchip Technology | DO-214AB, SMC | 3A | Standard | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 150V | 40pF @ 4V, 1MHz | 1V @ 3A | 150V | 35ns | -55°C ~ 150°C | |
SS310C-HF | DIODE SCHOTTKY 3A 100V SMC | Comchip Technology | DO-214AB, SMC | 3A | Schottky | Surface Mount | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 100V | 350pF @ 4V, 1MHz | 850mV @ 3A | 100V | -55°C ~ 150°C | ||
SR340-HF | DIODE SCHOTTKY 40V 3A DO-27 | Comchip Technology | DO-201AA, DO-27, Axial | 3A | Schottky | Through Hole | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 40V | 250pF @ 4V, 1MHz | 500mV @ 3A | 40V | -50°C ~ 150°C |
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