|
SBRT10U60D1Q-13
|
DIODE SBR 60V 10A TO252 |
Diodes Incorporated |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Super Barrier |
Surface Mount |
TO-252, (D-Pak) |
Fast Recovery =< 500ns, > 200mA (Io) |
400µA @ 60V |
|
520mV @ 10A |
60V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101, SBR® |
|
FR1003-TP
|
DIODE GPP FAST 10A R-6 |
Micro Commercial Co |
R-6, Axial |
10A |
Standard |
Through Hole |
R-6 |
Fast Recovery =< 500ns, > 200mA (Io) |
|
|
|
200V |
150ns |
-55°C ~ 150°C |
|
|
FR1007GP-AP
|
DIODE GPP FAST 10A R-6 |
Micro Commercial Co |
R-6, Axial |
10A |
Standard |
Through Hole |
R-6 |
Fast Recovery =< 500ns, > 200mA (Io) |
|
|
|
1000V |
500ns |
-55°C ~ 150°C |
|
|
UPS1040E3/TR13
|
DIODE SCHOTTKY 40V 10A POWERMITE |
Microsemi Corporation |
Powermite®3 |
10A |
Schottky |
Surface Mount |
Powermite 3 |
Fast Recovery =< 500ns, > 200mA (Io) |
300µA @ 35V |
700pF @ 4V, 1MHz |
510mV @ 10A |
40V |
|
-55°C ~ 150°C |
|
|
NTS10100MFST1G
|
DIODE SCHOTTKY 100V 10A 5DFN |
onsemi |
8-PowerTDFN, 5 Leads |
10A |
Schottky |
Surface Mount |
5-DFN (5x6) (8-SOFL) |
Fast Recovery =< 500ns, > 200mA (Io) |
70µA @ 100V |
|
720mV @ 10A |
100V |
|
-55°C ~ 150°C |
|
|
FFSP1065B-F085
|
SIC DIODE 650V |
onsemi |
TO-220-2 |
10A |
Silicon Carbide Schottky |
Through Hole |
TO-220-2 |
No Recovery Time > 500mA (Io) |
40µA @ 650V |
421pF @ 1V, 100kHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
Automotive, AEC-Q101 |
|
RFN10NS8DTL
|
SUPER FAST RECOVERY DIODE : RFN1 |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 800V |
|
2.1V @ 5A |
800V |
40ns |
150°C |
|
|
SFAF1001G C0G
|
DIODE GEN PURP 50V 10A ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 50V |
170pF @ 4V, 1MHz |
975mV @ 10A |
50V |
35ns |
-55°C ~ 150°C |
|
|
TST20L200CW
|
DIODE SCHOTTKY 200V 10A TO220AB |
Taiwan Semiconductor Corporation |
TO-220-3 |
10A |
Schottky |
Through Hole |
TO-220AB |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 200V |
|
990mV @ 10A |
200V |
|
-55°C ~ 150°C |
|
|
SR1040H
|
DIODE SCHOTTKY 40V 10A TO220AB |
Taiwan Semiconductor Corporation |
TO-220-3 |
10A |
Schottky |
Through Hole |
TO-220AB |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 40V |
|
550mV @ 5A |
40V |
|
-55°C ~ 125°C |
Automotive, AEC-Q101 |
|
VS-10ETS12THM3
|
RECTIFIER DIODE 10A 1200V TO-220 |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A |
Standard |
Through Hole |
TO-220AC |
Standard Recovery >500ns, > 200mA (Io) |
50µA @ 1200V |
|
1.1V @ 10A |
1200V |
|
-40°C ~ 150°C |
Automotive, AEC-Q101 |
|
VS-10ETF10S-M3
|
DIODE GEN PURP 1KV 10A D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 1000V |
|
1.33V @ 10A |
1000V |
310ns |
-40°C ~ 150°C |
|
|
MBR1090-M3/4W
|
DIODE SCHOTTKY 90V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 90V |
|
800mV @ 10A |
90V |
|
-65°C ~ 150°C |
|
|
VS-MBRB1035TRRHM3
|
SCHOTTKY - D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 35V |
600pF @ 5V, 1MHz |
840mV @ 20A |
35V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
WNSC2D101200WQ
|
SILICON CARBIDE SCHOTTKY DIODE |
WeEn Semiconductors |
TO-247-2 |
10A |
Silicon Carbide Schottky |
Through Hole |
TO-247-2 |
No Recovery Time > 500mA (Io) |
110µA @ 1200V |
490pF @ 1V, 1MHz |
1.65V @ 10A |
1200V |
0ns |
175°C |
|