- Current - Average Rectified (Io)
- Manufacturer
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CDBHA10100-HF | DIODE SCHOTTKY 100V 10A TO-277B | Comchip Technology | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 100V | 700mV @ 10A | 100V | -55°C ~ 150°C | |||
SBRT10U50SP5-13 | DIODE SBR 50V 10A POWERDI5 | Diodes Incorporated | PowerDI™ 5 | 10A | Super Barrier | Surface Mount | PowerDI™ 5 | Standard Recovery >500ns, > 200mA (Io) | 75mA @ 50V | 450mV @ 10A | 50V | -55°C ~ 150°C | SBR® | ||
DSC10065 | SILICON CARBIDE RECTIFIER TO220A | Diodes Incorporated | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO220AC (Type WX) | No Recovery Time > 500mA (Io) | 250µA @ 650V | 400pF @ 100mV, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | |
JANTX1N6840U3 | SCHOTTKY DIODE | Microchip Technology | 3-SMD, No Lead | 10A | Schottky | Surface Mount | U3 | Fast Recovery =< 500ns, > 200mA (Io) | 880mV @ 20A | 35V | -65°C ~ 150°C | ||||
FR1001GP-AP | DIODE GPP FAST 10A R-6 | Micro Commercial Co | R-6, Axial | 10A | Standard | Through Hole | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 50V | 150ns | -55°C ~ 150°C | ||||
PMEG45A10EPDZ | DIODE SCHOTTKY 45V 10A CFP15 | Nexperia USA Inc. | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | CFP15 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 45V | 240pF @ 10V, 1MHz | 540mV @ 10A | 45V | 13ns | 150°C (Max) | |
MBRB1045T4 | DIODE SCHOTTKY 10A 45V D2PAK | onsemi | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A | Schottky | Surface Mount | D²PAK | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 45V | 840mV @ 20A | 45V | SWITCHMODE™ | |||
NRVBB1060T4G | DIODE SCHOTTKY 60V 10A D2PAK | onsemi | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A | Schottky | Surface Mount | D²PAK | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 60V | 800mV @ 10A | 60V | -65°C ~ 175°C | SWITCHMODE™ | ||
MBR1060 | DIODE SCHOTTKY 60V 10A TO220-2 | onsemi | TO-220-2 | 10A | Schottky | Through Hole | TO-220-2 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 60V | 800mV @ 10A | 60V | -65°C ~ 175°C | SWITCHMODE™ | ||
ST1040S | DIODE SCHOTTKY 40V 10A TO277B | SMC Diode Solutions | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 40V | 470mV @ 10A | 40V | -55°C ~ 150°C | |||
STPSC10H065GY-TR | DIODE SCHTY SIC 650V 10A D2PAK | STMicroelectronics | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A | Silicon Carbide Schottky | Surface Mount | D²PAK | No Recovery Time > 500mA (Io) | 100µA @ 650V | 480pF @ 0V, 1MHz | 1.75V @ 10A | 650V | 0ns | -40°C ~ 175°C | Automotive, AEC-Q101 |
MBRF1060HC0G | DIODE SCHOTTKY 60V 10A ITO220AC | Taiwan Semiconductor Corporation | TO-220-2 Full Pack | 10A | Schottky | Through Hole | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 60V | 800mV @ 10A | 60V | -55°C ~ 150°C | Automotive, AEC-Q101 | ||
SS10PH10HM3_A/H | DIODE SCHOTTKY 100V 10A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 100V | 270pF @ 4V, 1MHz | 880mV @ 10A | 100V | -55°C ~ 175°C | Automotive, AEC-Q101 | |
VS-MBRB1035TRRPBF | DIODE SCHOTTKY 35V 10A D2PAK | Vishay General Semiconductor - Diodes Division | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A | Schottky | Surface Mount | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 35V | 570mV @ 10A | 35V | -65°C ~ 150°C | |||
10ETF10 | DIODE GEN PURP 1KV 10A TO220AC | Vishay General Semiconductor - Diodes Division | TO-220-2 | 10A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1000V | 1.33V @ 10A | 1000V | 310ns | -40°C ~ 150°C |
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