• Current - Average Rectified (Io)
  • Manufacturer
Found: 1626
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
SBM1040-13-F DIODE SCHOTTKY 40V 10A Diodes Incorporated Powermite®3 10A Schottky Surface Mount Powermite 3 Fast Recovery =< 500ns, > 200mA (Io) 300µA @ 35V 700pF @ 4V, 1MHz 510mV @ 10A 40V -65°C ~ 150°C
PDS1040-13 DIODE SCHOTTKY 40V 10A POWERDI5 Diodes Incorporated PowerDI™ 5 10A Schottky Surface Mount PowerDI™ 5 Fast Recovery =< 500ns, > 200mA (Io) 700µA @ 40V 510mV @ 10A 40V -65°C ~ 150°C
DSS10-0045A DIODE SCHOTTKY 45V 10A TO220AC IXYS TO-220-2 10A Schottky Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 300µA @ 45V 680mV @ 10A 45V -55°C ~ 175°C
UPS1040E3/TR13 DIODE SCHOTTKY 40V 10A POWERMITE Microchip Technology Powermite®3 10A Schottky Surface Mount Powermite 3 Fast Recovery =< 500ns, > 200mA (Io) 300µA @ 35V 700pF @ 4V, 1MHz 510mV @ 10A 40V -55°C ~ 150°C
FFPF10UP20STU DIODE GP 200V 10A TO220F-2L onsemi TO-220-2 Full Pack 10A Standard Through Hole TO-220F-2L Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 200V 1.15V @ 10A 200V 35ns -65°C ~ 150°C
UD1006FR-H DIODE GEN PURP 600V 10A onsemi TO-220-2 10A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 600V 1.3V @ 10A 600V 150ns 150°C (Max)
ST1050STR DIODE SCHOTTKY 50V 10A TO277B SMC Diode Solutions TO-277, 3-PowerDFN 10A Schottky Surface Mount TO-277B Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 50V 550mV @ 10A 50V -55°C ~ 150°C
S4D10120H DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions TO-247-2 10A Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 30µA @ 1200V 772pF @ 0V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 175°C
TST20H200CW DIODE SCHOTTKY 200V 10A TO220AB Taiwan Semiconductor Corporation TO-220-3 10A Schottky Through Hole TO-220AB Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 200V 930mV @ 10A 200V -55°C ~ 150°C
SFA1002GHC0G DIODE GEN PURP 100V 10A TO220AC Taiwan Semiconductor Corporation TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 100V 70pF @ 4V, 1MHz 975mV @ 10A 100V 35ns -55°C ~ 150°C Automotive, AEC-Q101
GPAS1006 MNG DIODE GEN PURP 800V 10A TO263AB Taiwan Semiconductor Corporation TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Standard Surface Mount TO-263AB (D²PAK) Standard Recovery >500ns, > 200mA (Io) 5µA @ 800V 50pF @ 4V, 1MHz 1.1V @ 10A 800V -55°C ~ 150°C
SF1004GHC0G DIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation TO-220-3 10A Standard Through Hole TO-220AB Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 200V 70pF @ 4V, 1MHz 975mV @ 5A 200V 35ns -55°C ~ 150°C Automotive, AEC-Q101
TPMR10D S1G DIODE GEN PURP 200V 10A TO277A Taiwan Semiconductor Corporation TO-277, 3-PowerDFN 10A Standard Surface Mount TO-277A (SMPC) Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 200V 140pF @ 4V, 1MHz 950mV @ 10A 200V 35ns -55°C ~ 175°C
MBRB1050-E3/81 DIODE SCHOTTKY 50V 10A TO263AB Vishay General Semiconductor - Diodes Division TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Schottky Surface Mount TO-263AB (D²PAK) Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 50V 800mV @ 10A 50V -65°C ~ 150°C
MBRF10H60-E3/45 DIODE SCHOTTKY 60V 10A ITO220AC Vishay General Semiconductor - Diodes Division TO-220-2 Full Pack, Isolated Tab 10A Schottky Through Hole ITO-220AC Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 60V 710mV @ 10A 60V -65°C ~ 175°C