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IDW20G65C5BXKSA2
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DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDW10S120FKSA1
|
DIODE SCHOTTKY 1200V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
240µA @ 1200V |
580pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIC1060P-BP
|
SIC SCHOTTKY BARRIER , 10A ,650V |
Micro Commercial Co |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
44 µA @ 650 V |
36pF @ 400V, 1MHz |
1.6V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
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RJS6004TDPN-EJ#YJ1
|
DIODE SCHOTTKY TO220FP |
Renesas Electronics America Inc |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AB-2L |
No Recovery Time > 500mA (Io) |
10µA @ 600V |
|
1.8V @ 10A |
600V |
0ns |
150°C (Max) |
|
|
SDT10S30
|
RECTIFIER DIODE |
Rochester Electronics, LLC |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
200µA @ 300V |
600pF @ 0V, 1MHz |
1.7V @ 10A |
300V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
GP3D010A065B
|
SIC SCHOTTKY DIODE 650V TO247-2 |
SemiQ |
TO-247-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-2 |
No Recovery Time > 500mA (Io) |
25µA @ 650V |
419pF @ 1V, 1MHz |
1.6V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
AMP |
|
SRAF10150
|
DIODE SCHOTTKY 150V 10A ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 150V |
|
950mV @ 10A |
150V |
|
-55°C ~ 150°C |
|
|
SFAF1006GH
|
DIODE GEN PURP 10A 400V TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 400V |
140pF @ 4V, 1MHz |
1.3V @ 10A |
400V |
35ns |
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
MBRF1090H
|
DIODE SCHOTTKY 90V 10A ITO220 |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 90V |
|
850mV @ 10A |
90V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
SRA10150
|
DIODE SCHOTTKY 150V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 150V |
|
950mV @ 10A |
150V |
|
-55°C ~ 150°C |
|
|
MBRF1045
|
DIODE SCHOTTKY 10A 45V ITO220 |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 45V |
|
700mV @ 10A |
45V |
|
-55°C ~ 150°C |
|
|
MBRF1060
|
DIODE SCHOTTKY 10A 60V ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 60V |
|
800mV @ 10A |
60V |
|
-55°C ~ 150°C |
|
|
S10KC M6
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 800V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
800V |
|
-55°C ~ 150°C |
|
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CLS01,LFJFQ(O
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
0.47V @ 10A |
30V |
|
-40°C ~ 125°C |
|
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UJ3D1220KSD
|
1200V 20A SIC SCHOTTKY DIODE G3, |
UnitedSiC |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-3 |
No Recovery Time > 500mA (Io) |
220µA @ 1200V |
1020pF @ 1V, 1MHz |
1.6V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
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