|
GD10MPS12H
|
1200V 10A TO-247-2 SIC SCHOTTKY |
GeneSiC Semiconductor |
TO-247-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-2 |
No Recovery Time > 500mA (Io) |
|
|
|
1200V |
0ns |
175°C |
SiC Schottky MPS™ |
|
G3S06503H
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
SIDC08D120H6X1SA1
|
DIODE GEN PURP 1.2KV 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Sawn on foil |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 1200V |
|
1.6V @ 10A |
1200V |
|
-55°C ~ 150°C |
|
|
SIDC06D60E6X1SA3
|
DIODE GEN PURP 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Sawn on foil |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
SDT10S60
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
350µA @ 600V |
350pF @ 0V, 1MHz |
1.7V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
RJU3051SDPE-00#J3
|
DIODE GEN PURP 360V 10A LDPAK |
Renesas Electronics America |
SC-83 |
10A (DC) |
Standard |
Surface Mount |
4-LDPAK |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 360V |
|
1.7V @ 10A |
360V |
25ns |
-55°C ~ 150°C |
|
|
SCS210AGC
|
DIODE SCHOTTKY 650V 10A TO220AC |
Rohm Semiconductor |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
200µA @ 600V |
365pF @ 1V, 1MHz |
1.55V @ 10A |
650V |
0ns |
175°C (Max) |
|
|
SCS210KGC
|
DIODE SCHOTTKY 1.2KV 10A TO220AC |
Rohm Semiconductor |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
200µA @ 1200V |
550pF @ 1V, 1MHz |
1.6V @ 10A |
1200V |
0ns |
175°C (Max) |
|
|
SCS210KGC17
|
DIODE SCHOTTKY 1.2KV 10A TO220AC |
Rohm Semiconductor |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220ACFP |
No Recovery Time > 500mA (Io) |
200µA @ 1200V |
550pF @ 1V, 1MHz |
1.6V @ 10A |
1200V |
0ns |
175°C |
|
|
S10GCH
|
DIODE GEN PURP 400V 10A DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 400V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
400V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
S10JC R6G
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 600V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
SRA1040
|
DIODE SCHOTTKY 40V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 40V |
|
550mV @ 10A |
40V |
|
-55°C ~ 125°C |
|
|
CLS03(T6L,CANO-O,Q
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
CLS03(TE16L,SQC,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
CLS02(T6L,CANO-O,Q
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|