|
CDBJFSC101200-G
|
DIODE SIC 10A 1200V TO-220F |
Comchip Technology |
TO-220-2 Full Pack |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
780pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503H
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology-GPT |
TO-220-2 Full Pack |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
MSC010SDA120B
|
DIODE SCHOTTKY 1.2KV 10A TO247 |
Microchip Technology |
TO-247-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247 |
No Recovery Time > 500mA (Io) |
|
|
1.5V @ 10A |
1200V |
0ns |
|
|
|
PCDB10120G1_T0_00001
|
1200V SIC SCHOTTKY BARRIER DIODE |
Panjit International Inc. |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
529pF @ 1V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
RJU6052TDPP-EJ#T2
|
DIODE GEN PURP 600V 10A TO220FP |
Renesas Electronics America |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 600V |
|
3V @ 10A |
600V |
25ns |
150°C (Max) |
|
|
RJS6004TDPN-EJ#YJ1
|
DIODE SCHOTTKY TO220FP |
Renesas Electronics America |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AB-2L |
No Recovery Time > 500mA (Io) |
10µA @ 600V |
|
1.8V @ 10A |
600V |
0ns |
150°C (Max) |
|
|
RJU6052TDPP-AJ#T2
|
DIODE GEN PURP 600V TO220FP |
Renesas Electronics America Inc |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 600V |
|
3V @ 10A |
600V |
25ns |
150°C (Max) |
|
|
SRA1090H
|
DIODE SCHOTTKY 90V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 90V |
|
850mV @ 10A |
90V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
SFA1006G
|
DIODE GEN PURP 400V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Standard |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 400V |
50pF @ 4V, 1MHz |
1.3V @ 10A |
400V |
35ns |
-55°C ~ 150°C |
|
|
SRAF1040
|
DIODE SCHOTTKY 40V 10A ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 40V |
|
550mV @ 10A |
40V |
|
-55°C ~ 125°C |
|
|
SFAF1006G
|
DIODE GEN PURP 10A 400V TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 400V |
140pF @ 4V, 1MHz |
1.3V @ 10A |
400V |
35ns |
-55°C ~ 150°C |
|
|
S10MC M6
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 1000V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
1000V |
|
-55°C ~ 150°C |
|
|
CLS01(TE16L,PAS,Q)
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
470mV @ 10A |
30V |
|
-40°C ~ 125°C |
|
|
VBT1045BP-M3/8W
|
DIODE SCHOTTKY 10A 45V TO-263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 45V |
|
680mV @ 10A |
45V |
|
-40°C ~ 150°C |
|
|
C4D02120A
|
DIODE SCHOTTKY 1.2KV 2A TO220-2 |
Wolfspeed, Inc. |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
167pF @ 0V, 1MHz |
1.8V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
Z-Rec® |