|
C4D02120A
|
DIODE SCHOTTKY 1.2KV 2A TO220-2 |
Cree/Wolfspeed |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
167pF @ 0V, 1MHz |
1.8V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
Z-Rec® |
|
IDW10G65C5FKSA1
|
DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
400µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC06D60E6X7SA1
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
SICF1060P-BP
|
SIC SCHOTTKY BARRIER , 10A ,650V |
Micro Commercial Co |
TO-220-2 Isolated Tab |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
ITO-220AC |
No Recovery Time > 500mA (Io) |
44 µA @ 650 V |
452pF @ 0V, 1MHz |
1.6V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
MSC010SDA120K
|
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
Microsemi Corporation |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220 [K] |
No Recovery Time > 500mA (Io) |
|
|
1.5V @ 10A |
1200V |
0ns |
|
|
|
RJU6052TDPP-EJ#T2
|
DIODE GEN PURP 600V 10A TO220FP |
Renesas Electronics America Inc |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 600V |
|
3V @ 10A |
600V |
25ns |
150°C (Max) |
|
|
SCS210KE2C
|
DIODE SCHOTTKY 1200V 10A TO247 |
Rohm Semiconductor |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247 |
No Recovery Time > 500mA (Io) |
|
|
|
1200V |
0ns |
175°C (Max) |
|
|
S10JC R6
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 600V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
SRA10100
|
DIODE SCHOTTKY 100V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 100V |
|
850mV @ 10A |
100V |
|
-55°C ~ 150°C |
|
|
HERAF1008G
|
DIODE GEN PURP 10A 1000V IT0-220 |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 1000V |
60pF @ 4V, 1MHz |
1.7V @ 10A |
1000V |
80ns |
-55°C ~ 150°C |
|
|
SRAF10100
|
DIODE SCHOTTKY 100V 10A ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 100V |
|
850mV @ 10A |
100V |
|
-55°C ~ 150°C |
|
|
CLS03(TE16L,PSD,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
CLS02(TE16L,HIT,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
|
CLS03(TE16L,PCD,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
UJ3D06520KSD
|
650V 20A SIC SCHOTTKY DIODE G3, |
UnitedSiC |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-3 |
No Recovery Time > 500mA (Io) |
120µA @ 650V |
654pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
Gen-III |