|
IDH10SG60CXKSA1
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10G120C5XKSA1
|
DIODE SCHOT 1200V 10A TO220-2-1 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
62µA @ 1200V |
525pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC03D60C8X1SA2
|
DIODE SWITCHING 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.95V @ 10A |
600V |
|
-40°C ~ 175°C |
|
|
IDH10G65C5XKSA1
|
DIODE SCHOTTKY 650V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
340µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SICU1060P-TP
|
SIC SCHOTTKY BARRIER , 10A ,650V |
Micro Commercial Co |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
DPAK (TO-252) |
No Recovery Time > 500mA (Io) |
44 µA @ 650 V |
452pF @ 0V, 1MHz |
1.6V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
MSC010SDA120B
|
DIODE SCHOTTKY 1.2KV 10A TO247 |
Microsemi Corporation |
TO-247-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247 |
No Recovery Time > 500mA (Io) |
|
|
1.5V @ 10A |
1200V |
0ns |
|
|
|
BY359X-1500,127
|
DIODE GEN PURP 1.5KV 10A TO220F |
NXP USA Inc. |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP |
Standard Recovery >500ns, > 200mA (Io) |
100µA @ 1300V |
|
1.8V @ 20A |
1500V |
600ns |
150°C (Max) |
|
|
RJS6004TDPP-EJ#T2
|
DIODE SCHOTTKY 600V 10A TO220FP |
Renesas Electronics America |
TO-220-3 Full Pack |
10A (DC) |
Schottky |
Surface Mount |
TO-220FP |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.8V @ 10A |
600V |
15ns |
-55°C ~ 150°C |
|
|
RJU3051TDPP-EJ#T2
|
DIODE TO-263 |
Renesas Electronics America Inc |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 360V |
|
1.7V @ 10A |
360V |
25ns |
150°C (Max) |
|
|
GP2D010A120C
|
DIODE SCHOTTKY 1.2KV 10A TO252-2 |
SemiQ |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252-2L (DPAK) |
No Recovery Time > 500mA (Io) |
20µA @ 1200V |
635pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
AMP |
|
S10JC M6
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 600V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
CLS02(TE16R,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
|
CLS01(TE16R,Q)
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
470mV @ 10A |
30V |
|
-40°C ~ 125°C |
|
|
UJ3D1210TS
|
1200V 10A SIC SCHOTTKY DIODE G3, |
UnitedSiC |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2 |
No Recovery Time > 500mA (Io) |
110µA @ 1200V |
510pF @ 1V, 1MHz |
1.6V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
VS-C10ET07T-M3
|
DIODE SCHOTTKY 650V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
55 µA @ 650 V |
430pF @ 1V, 1MHz |
1.8V @ 10A |
650V |
|
-55°C ~ 175°C |
|