|
G3S06504H
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
IDH10G65C5ZXKSA1
|
DIODE SCHOTTKY 650V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDD10SG60CXTMA1
|
DIODE SCHOTTKY 600V 10A TO252-3 |
Infineon Technologies |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO252-3 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC06D60E6X1SA4
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
BY359-1500,127
|
DIODE GEN PURP 1.5KV 10A TO220AC |
NXP USA Inc. |
TO-220-2 |
10A (DC) |
Standard |
Through Hole |
TO-220AC |
Standard Recovery >500ns, > 200mA (Io) |
100µA @ 1300V |
|
1.8V @ 20A |
1500V |
600ns |
150°C (Max) |
|
|
RJU6052TDPP-EJ#T2
|
RJU6052 - RECTIFIER DIODE, 10A, |
Renesas |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 600V |
|
3V @ 10A |
600V |
25ns |
150°C |
|
|
SCS110AMC
|
DIODE SCHOTTKY 600V 10A TO220FM |
Rohm Semiconductor |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220FM |
No Recovery Time > 500mA (Io) |
200µA @ 600V |
430pF @ 1V, 1MHz |
1.7V @ 10A |
600V |
0ns |
150°C (Max) |
|
|
SFA1005G
|
DIODE GEN PURP 300V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Standard |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 300V |
50pF @ 4V, 1MHz |
1.3V @ 10A |
300V |
35ns |
-55°C ~ 150°C |
|
|
MBRF10150
|
DIODE SCHOTTKY 150V 10A ITO220AB |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 150V |
|
1.05V @ 10A |
150V |
|
-55°C ~ 150°C |
|
|
S10GC R7
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 400V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
400V |
|
-55°C ~ 150°C |
|
|
MBR10150
|
DIODE SCHOTTKY 10A 150V TO220AB |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 150V |
|
1.05V @ 10A |
150V |
|
-55°C ~ 150°C |
|
|
UGF10J
|
DIODE GEN PURP 600V 10A ITO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
5µA @ 600V |
|
2V @ 10A |
600V |
25ns |
-55°C ~ 150°C |
|
|
UJ3D06510TS
|
650V 10A SIC SCHOTTKY DIODE G3, |
UnitedSiC |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2 |
No Recovery Time > 500mA (Io) |
60µA @ 650V |
327pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
Gen-III |
|
VBT1045BP-E3/4W
|
DIODE SCHOTTKY 45V 10A TO263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 45V |
|
680mV @ 10A |
45V |
|
200°C (Max) |
TMBS® |
|
VBT1045BP-E3/8W
|
DIODE SCHOTTKY 45V 10A TO263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 45V |
|
680mV @ 10A |
45V |
|
200°C (Max) |
TMBS® |