|
CSICD10-650 BK
|
DIODE SCHOTTKY 650V 10A DPAK |
Central Semiconductor Corp |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
DPAK |
No Recovery Time > 500mA (Io) |
125µA @ 650V |
325pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
IDW10G65C5XKSA1
|
DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10SG60CXKSA2
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10S60CAKSA1
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
140µA @ 600V |
480pF @ 1V, 1MHz |
1.7V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
MSC010SDA070K
|
DIODE SCHOTTKY 700V 10A TO220-3 |
Microsemi Corporation |
TO-220-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-3 |
No Recovery Time > 500mA (Io) |
|
|
1.5V @ 10A |
700V |
0ns |
|
|
|
PCDB1065G1_T0_00001
|
650V SIC SCHOTTKY BARRIER DIODE |
Panjit International Inc. |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
70µA @ 650V |
364pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
PCDD10120G1_L2_00001
|
1200V SIC SCHOTTKY BARRIER DIODE |
Panjit International Inc. |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252AA |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
529pF @ 1V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
PCDD1065G1_L2_00001
|
650V SIC SCHOTTKY BARRIER DIODE |
Panjit International Inc. |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252AA |
No Recovery Time > 500mA (Io) |
70µA @ 650V |
364pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
RJS6004TDPN-EJ#T2
|
DIODE SCHOTTKY TO220FP |
Renesas Electronics America Inc |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AB-2L |
No Recovery Time > 500mA (Io) |
10µA @ 600V |
|
1.8V @ 10A |
600V |
0ns |
150°C (Max) |
|
|
HERAF1006G
|
DIODE GEN PURP 10A 600V IT0-220A |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
60pF @ 4V, 1MHz |
1.7V @ 10A |
600V |
80ns |
-55°C ~ 150°C |
|
|
SFA1004G
|
DIODE GEN PURP 200V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Standard |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 200V |
70pF @ 4V, 1MHz |
975mV @ 10A |
200V |
35ns |
-55°C ~ 150°C |
|
|
SFA1008G
|
DIODE GEN PURP 600V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Standard |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
50pF @ 4V, 1MHz |
1.7V @ 10A |
600V |
35ns |
-55°C ~ 150°C |
|
|
HERAF1005G
|
DIODE GEN PURP 10A 400V IT0-220A |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 400V |
80pF @ 4V, 1MHz |
1.3V @ 10A |
400V |
50ns |
-55°C ~ 150°C |
|
|
MBR1045
|
DIODE SCHOTTKY 10A 45V TO220AB |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 45V |
|
700mV @ 10A |
45V |
|
-55°C ~ 150°C |
|
|
V10P45HM3_A/I
|
DIODE SCHOTTKY 45V 10A TO277A |
Vishay General Semiconductor - Diodes Division |
TO-277, 3-PowerDFN |
10A (DC) |
Schottky |
Surface Mount |
TO-277A (SMPC) |
Fast Recovery =< 500ns, > 200mA (Io) |
800µA @ 45V |
|
570mV @ 10A |
45V |
|
-40°C ~ 150°C |
Automotive, AEC-Q101, eSMP®, TMBS® |