|
IDH10SG60C
|
IDH10SG60 - COOLSIC SCHOTTKY DIO |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC06D60E6X1SA1
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
LFUSCD10120A
|
DIODE SC SCHOTKY 1200V 10A TO220 |
Littelfuse Inc. |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
250µA @ 1200V |
500pF @ 1V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
175°C (Max) |
|
|
SIC1060PL8-TP
|
SIC SCHOTTKY BARRIER , 10A ,650V |
Micro Commercial Co |
4-XQFN Exposed Pad |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
DFN0808A |
No Recovery Time > 500mA (Io) |
44 µA @ 650 V |
452pF @ 0V, 1MHz |
1.6V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
SCS210AJTLL
|
DIODE SCHOTTKY 650V 10A TO263AB |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263AB |
No Recovery Time > 500mA (Io) |
200µA @ 600V |
365pF @ 1V, 1MHz |
1.55V @ 10A |
650V |
0ns |
175°C (Max) |
|
|
HERAF1007G
|
DIODE GEN PURP 10A 800V IT0-220A |
Taiwan Semiconductor Corporation |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 800V |
60pF @ 4V, 1MHz |
1.7V @ 10A |
800V |
80ns |
-55°C ~ 150°C |
|
|
MBR10200
|
DIODE SCHOTTKY 10A 200V TO220AB |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 200V |
|
1.05V @ 10A |
200V |
|
-55°C ~ 150°C |
|
|
SRA1060
|
DIODE SCHOTTKY 60V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 60V |
|
700mV @ 10A |
60V |
|
-55°C ~ 150°C |
|
|
MBR10100
|
DIODE SCHOTTKY 10A 100V TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A (DC) |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 100V |
|
850mV @ 10A |
100V |
|
-55°C ~ 150°C |
|
|
CLS02(TE16L,SQC,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
|
TRS10E65F,S1Q
|
DODE SCHOTTKY 650V TO220 |
Toshiba Semiconductor and Storage |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2L |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
36pF @ 650V, 1MHz |
1.6V @ 10A |
650V |
0ns |
175°C (Max) |
|
|
CLS03,LNITTOQ(O
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
VS-C20CP07L-M3
|
DIODE SCHOTTKY 650V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
55 µA @ 650 V |
430pF @ 1V, 1MHz |
1.8V @ 10A |
650V |
|
-55°C ~ 175°C |
|
|
VBT1045BP-M3/4W
|
DIODE SCHOTTKY 10A 45V TO-263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
500µA @ 45V |
|
680mV @ 10A |
45V |
10ns |
-40°C ~ 150°C |
|
|
C4D02120E
|
DIODE SCHOTTKY 1.2KV 2A TO252-2 |
Wolfspeed, Inc. |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252-2 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
167pF @ 0V, 1MHz |
1.8V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
Z-Rec® |