- Current - Average Rectified (Io)
- Manufacturer
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DZ1070N26KHPSA1 | DIODE GEN PURP 2.6KV 1070A MOD | Infineon Technologies | Module | 1070A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 2600V | 1.52V @ 3400A | 2600V | -40°C ~ 150°C |
| D711N65TXPSA1 | DIODE GEN PURP 6.5KV 1070A | Infineon Technologies | DO-200AB, B-PUK | 1070A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6500V | 1.9V @ 1200A | 6500V | -40°C ~ 160°C | |
| D711N60TXPSA1 | DIODE GEN PURP 6KV 1070A | Infineon Technologies | DO-200AB, B-PUK | 1070A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6000V | 1.9V @ 1200A | 6000V | -40°C ~ 160°C | |
| D711N68TXPSA1 | DIODE GEN PURP 6.8KV 1070A | Infineon Technologies | DO-200AB, B-PUK | 1070A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6800V | 1.9V @ 1200A | 6800V | -40°C ~ 160°C | |
| DZ1070N28KHPSA1 | DIODE GEN PURP 2.8KV 1070A MOD | Infineon Technologies | Module | 1070A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 2800V | 1.52V @ 3400A | 2800V | -40°C ~ 150°C |
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