- Manufacturer
- Voltage - Peak Reverse (Max)
- Current - Average Rectified (Io)
- Supplier Device Package
-
- Operating Temperature
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBJ2510-05-G | BRIDGE RECT 1PHASE 1KV 25A GBJ | Comchip Technology | 4-SIP, GBJ | 1kV | 25A | Single Phase | Through Hole | GBJ | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1V @ 12.5A | |
| GBU8A | 1BRect, 50V, 8A | Diotec Semiconductor | 4-SIP, GBU | 50V | 5.6A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 50V | 1V @ 8A | |
| GBU15M | BRIDGE RECT 1PHASE 1KV 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 15A | |
| VUO190-08NO7 | BRIDGE RECT 3P 800V 248A PWS-E1 | IXYS | PWS-E | 800V | 248A | Three Phase | Chassis Mount | PWS-E | Standard | -40°C ~ 150°C (TJ) | 200µA @ 800V | 1.07V @ 80A | |
| 679-6 | BRIDGE RECTIFIER | Microchip Technology | |||||||||||
| GBPC1204 | BRIDGE RECT 1PHASE 400V 12A GBPC | onsemi | 4-Square, GBPC | 400V | 12A | Single Phase | QC Terminal | GBPC | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 6A | |
| KBU4D | BRIDGE RECT 1PHASE 200V 4A KBU | onsemi | 4-SIP, KBU | 200V | 4A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1V @ 4A | |
| GBPC3502 | BRIDGE RECT 1PHASE 200V 35A GBPC | SMC Diode Solutions | 4-Square, GBPC | 200V | 35A | Single Phase | QC Terminal | GBPC | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 17.5A | |
| TS8P04GH | BRIDGE RECT 1PHASE 400V 8A TS-6P | Taiwan Semiconductor Corporation | 4-SIP, TS-6P | 400V | 8A | Single Phase | Through Hole | TS-6P | Standard | -55°C ~ 150°C (TJ) | 10µA @ 400V | 1.1V @ 8A | Automotive, AEC-Q101 |
| KBU606G T0 | BRIDGE RECT 1PHASE 800V 6A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 800V | 6A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 6A | |
| GBL06L-6832E3/45 | BRIDGE RECT 1PHASE 600V 3A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 600V | 3A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 4A | |
| GBL06-E3/45 | BRIDGE RECT 1PHASE 600V 3A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 600V | 3A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 4A | |
| B125C1500G-E4/51 | BRIDGE RECT 1PHASE 200V 1.5A WOG | Vishay General Semiconductor - Diodes Division | 4-Circular, WOG | 200V | 1.5A | Single Phase | Through Hole | WOG | Standard | -40°C ~ 125°C (TJ) | 10µA @ 125V | 1V @ 1.5A | |
| G2SB60L-5753E3/45 | BRIDGE RECT 1PHASE 600V 1.5A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 600V | 1.5A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 750mA | |
| VS-160MT160KPBF | BRIDGE RECT 3P 1.6KV 160A MT-K | Vishay General Semiconductor - Diodes Division | MT-K Module | 1.6kV | 160A | Three Phase | Chassis Mount | MT-K | Standard | -40°C ~ 150°C (TJ) |
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