Semiconductors, Diodes Nexperia USA Inc. DSN1006U-2

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • PMEG3010AESAYL
    DIODE SCHOTTKY 30V 1A DSN1006U-2
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 2-XDFN
    • Supplier Device Package: DSN1006U-2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 3.5ns
    • Current - Reverse Leakage @ Vr: 1.25mA @ 30V
    • Capacitance @ Vr, F: 32pF @ 10V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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