Semiconductors, Diodes Nexperia USA Inc. DSN1006-2

Diodes - RF 0
Diodes - Rectifiers - Arrays 10
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 10

PMEG3010ESBZ

DIODE SCHOTTKY 30V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 565mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.2ns
- Current - Reverse Leakage @ Vr: 45µA @ 30V
- Capacitance @ Vr, F: 32pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG3010AESBZ

DIODE SCHOTTKY 30V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.5ns
- Current - Reverse Leakage @ Vr: 1.25mA @ 30V
- Capacitance @ Vr, F: 32pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG6010ESBYL

DIODE SCHOTTKY 60V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 730mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.4ns
- Current - Reverse Leakage @ Vr: 30µA @ 60V
- Capacitance @ Vr, F: 20pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG4010AESBYL

DIODE SCHOTTKY 40V 1A SOD993

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 505mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.1ns
- Current - Reverse Leakage @ Vr: 1250µA @ 40V
- Capacitance @ Vr, F: 75pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG4010ESBYL

DIODE SCHOTTKY 40V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.9ns
- Current - Reverse Leakage @ Vr: 40µA @ 40V
- Capacitance @ Vr, F: 22pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG4010ESBZ

DIODE SCHOTTKY 40V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.9ns
- Current - Reverse Leakage @ Vr: 40µA @ 40V
- Capacitance @ Vr, F: 22pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG3010AESBYL

DIODE SCHOTTKY 30V 1A SOD993

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.5ns
- Current - Reverse Leakage @ Vr: 255µA @ 20V
- Capacitance @ Vr, F: 86pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG3010ESBYL

DIODE SCHOTTKY 30V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 565mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.2ns
- Current - Reverse Leakage @ Vr: 45µA @ 30V
- Capacitance @ Vr, F: 32pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG6010AESBYL

DIODE SCHOTTKY 60V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 625mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.4ns
- Current - Reverse Leakage @ Vr: 650µA @ 60V
- Capacitance @ Vr, F: 20pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG4010AESBZ

DIODE SCHOTTKY 40V 1A DSN1006-2

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 505mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.1ns
- Current - Reverse Leakage @ Vr: 1.25mA @ 40V
- Capacitance @ Vr, F: 22pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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