Semiconductors, Diodes Microsemi Corporation B, Axial

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 10
  • 1N5420
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 400ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N6320C
    DIODE ZENER 500MW B-BODY
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/533
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
    • Current - Reverse Leakage @ Vr: 2µA @ 4V
    • Tolerance: ±2%
    • Power - Max: 500mW
    • Voltage - Zener (Nom) (Vz): 6.8V
    • Impedance (Max) (Zzt): 3 Ohms
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  • 1N5552/TR
    STD RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTX1N5420
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/411
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 400ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N5420
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/411
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JAN1N5420
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/411
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 400ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 1N5417
    DIODE GEN PURP 200V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N6320D
    DIODE ZENER 500MW B-BODY
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/533
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
    • Current - Reverse Leakage @ Vr: 2µA @ 4V
    • Tolerance: ±1%
    • Power - Max: 500mW
    • Voltage - Zener (Nom) (Vz): 6.8V
    • Impedance (Max) (Zzt): 3 Ohms
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  • JANTX1N5811/TR
    UFR,FRR
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/477
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 150V
    • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 1N5809/TR
    UFR,FRR
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: B, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 10
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  • 100