Semiconductors, Diodes Microsemi Corporation Axial

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 15
  • JANTXV1N5186
    DIODE GEN PURP 100V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/424
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 2µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N5188
    DIODE GEN PURP 400V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/297
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 2µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JAN1N5187
    DIODE GEN PURP 200V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/424
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 2µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 1N4946
    DIODE GEN PURP 600V 1A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Capacitance @ Vr, F: 25pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N5190
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/297
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 2µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JANTXV1N5187
    DIODE GEN PURP 100V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/424
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 2µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • UM9604
    RF DIODE PIN 400V 1.5W AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: Axial
    • Supplier Device Package: Axial
    • Diode Type: PIN - Single
    • Capacitance @ Vr, F: 1.2pF @ 100V, 1MHz
    • Current - Max: 100mA
    • Power Dissipation (Max): 1.5W
    • Voltage - Peak Reverse (Max): 400V
    • Resistance @ If, F: 600mOhm @ 100mA, 100MHz
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  • JANTX1N6620
    DIODE GEN PURP 220V 2A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/585
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 220V
    • Current - Average Rectified (Io): 2A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 500nA @ 220V
    • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N5190
    DIODE GEN PURP 600V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/420
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 400ns
    • Current - Reverse Leakage @ Vr: 2µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • UES1302
    DIODE GEN PURP 100V 6A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 925mV @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 1N5385B/TR12
    DIODE ZENER 170V 5W AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C
    • Package / Case: T-18, Axial
    • Supplier Device Package: Axial
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
    • Current - Reverse Leakage @ Vr: 500nA @ 122V
    • Tolerance: ±5%
    • Power - Max: 5W
    • Voltage - Zener (Nom) (Vz): 170V
    • Impedance (Max) (Zzt): 380 Ohms
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  • 1N5824
    DIODE SCHOTTKY 5A 30V TOPHAT
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: Axial
    • Supplier Device Package: Axial
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 5A
    • Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10mA @ 30V
    • Operating Temperature - Junction: -65°C ~ 125°C
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  • JAN1N5188
    DIODE GEN PURP 400V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/424
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 2µA @ 400V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • MX1H5615
    DIODE GEN PURP 200V AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Speed: Standard Recovery >500ns, > 200mA (Io)
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  • JANTX1N5187
    DIODE GEN PURP 200V 3A AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/424
    • Mounting Type: Through Hole
    • Package / Case: B, Axial
    • Supplier Device Package: Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 2µA @ 200V
    • Operating Temperature - Junction: -65°C ~ 175°C
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