-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MSCDC200KK70D1PAG | PM-DIODE-SIC-SBD-D1P | Microchip Technology | Module | Silicon Carbide Schottky | Chassis Mount | D1P | No Recovery Time > 500mA (Io) | 1.8V @ 200A | 700V | 0ns | -40°C ~ 175°C | 1 Pair Common Cathode | 200A (DC) |
MSCDC150KK170D1PAG | PM-DIODE-SIC-SBD-D1P | Microchip Technology | Module | Silicon Carbide Schottky | Chassis Mount | D1P | No Recovery Time > 500mA (Io) | 1.8V @ 150A | 1700V | 0ns | -40°C ~ 175°C | 1 Pair Common Cathode | 150A (DC) |
MSCDC200A170D1PAG | PM-DIODE-SIC-SBD-D1P | Microchip Technology | Module | Silicon Carbide Schottky | Chassis Mount | D1P | No Recovery Time > 500mA (Io) | 1.8V @ 200A | 1700V | 0ns | -40°C ~ 175°C | 1 Pair Series Connection | 200A (DC) |
- 10
- 15
- 50
- 100