-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N6643U | DIODE GEN PURP 75V 300MA D-MELF | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 75V | 20ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 |
| JANTX1N6643US | DIODE GEN PURP 125V 300MA D5D | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 20V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 125V | 6ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 |
| JANS1N6641US | SWITCHING DIODE | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1.1V @ 200mA | 50V | 5ns | -65°C ~ 175°C | Military, MIL-PRF-19500/609 | |
| JANTX1N6640US | DIODE GEN PURP 50V 300MA D5D | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | 50V | 4ns | -65°C ~ 175°C | Military, MIL-PRF-19500/609 | |
| JANS1N6643 | SWITCHING DIODE | Microchip Technology | SQ-MELF, D | 300mA (DC) | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 150V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 50V | 6ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 |
| JAN1N6642U | DIODE GEN PURP 75V 300MA D5D | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | 75V | 5ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 | |
| JAN1N6643US | DIODE GEN PURP 50V 300MA D-MELF | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 50V | 6ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 |
| JANTXV1N6638 | DIODE GEN PURP 125V 300MA AXIAL | Microchip Technology | D, Axial | 300mA | Standard | Through Hole | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 125V | 2.5pF @ 0V, 1MHz | 1.1V @ 200mA | 125V | 20ns | -65°C ~ 175°C | Military, MIL-PRF-19500/578 |
| JANTXV1N6640US | SWITCHING DIODE | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 90 µA @ 50 V | 1V @ 200mA | 50V | 4ns | -65°C ~ 175°C | Military, MIL-PRF-19500/609 | |
| 1N6642US | DIODE GEN PURP 75V 300MA D5D | Microchip Technology | SQ-MELF, D | 300mA | Standard | Surface Mount | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 75V | 5ns | -65°C ~ 175°C |
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