-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GC4493-01 | SI PIN NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 750V | PIN - Single | Chip | -55°C ~ 150°C | 50mA | 0.75pF @ 50V, 1MHz | 800mOhm @ 100mA, 100MHz | ||||||||||||
GC15005-00 | SI TVAR NON HERMETIC CHIP | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 125°C | 2.4pF @ 20V, 1MHz | 8 | C0/C15 | 900 @ 4V, 50MHz | GC15000 | |||||||||
MS8350-P2819 | GAAS SCHOTTKY NON HERMETIC FLIP | Microchip Technology | Die | 3V | Schottky - 1 Pair Series Connection | Chip | -55°C ~ 125°C | 15mA | 80pF @ 0V, 1MHz | 7Ohm @ 10mA, 100MHz | ||||||||||||
MV31018-150A | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 2.2pF @ 4V, 1MHz | 10.2 | C2/C20 | 3000 @ 4V, 50MHz | ||||||||||
MV30016-150A/TR | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 2.2pF @ 4V, 1MHz | 5.6 | C2/C20 | 3000 @ 4V, 50MHz | ||||||||||
KV2133-150B | SI TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 125°C | 0.7pF @ 20V, 1MHz | 850 @ 4V, 50MHz | ||||||||||||
MV31019-P00 | GAAS TVAR NON HERMETIC CHIP | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 2.7pF @ 4V, 1MHz | 10.8 | C2/C20 | 2000 @ 4V, 50MHz | ||||||||||
LSP1005-154-8 | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 50V | PIN - Single | Chip | -55°C ~ 125°C | 5 mA | 0.4pF @ 50V, 1MHz | 250mW | 6.5Ohm @ 5mA, 100MHz | |||||||||||
GC9913-150A | SI SCHOTTKY NON HERMETIC EPSM SM | Microchip Technology | Die | 2V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 0V, 1MHz | 14Ohm @ 5mA, 1MHz | |||||||||||||
MV21005-150A | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 30V | Single | Surface Mount | Chip | -55°C ~ 175°C | 0.8pF @ 4V, 1MHz | 3.8 | C0/C30 | 6000 @ 4V, 50MHz | ||||||||||
GC4371-01 | SI NIP NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 70V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 10V, 1MHz | 900mOhm @ 20mA, 1GHz | |||||||||||||
MV30016-150A | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 2.2pF @ 4V, 1MHz | 5.6 | C2/C20 | 3000 @ 4V, 50MHz | ||||||||||
GC9704-UC | SI SCHOTTKY NON HERMETIC CHIP | Microchip Technology | Die | 10mA (DC) | Schottky | Surface Mount | Chip | Small Signal =< 200mA (Io), Any Speed | 100nA @ 1V | 0.8pF @ 0V, 1MHz | 600 mV @ 1 mA | 5V | -55°C ~ 150°C | |||||||||
KVX2163-150B | SI TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | Chip | ||||||||||||||||||
KV2301-00 | SI TVAR NON HERMETIC CHIP | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 150°C | 19pF @ 20V, 1MHz | 6.6 | C4/C20 | 110 @ 4V, 50MHz |
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