-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANS1N5822US/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | SQ-MELF, B | 3A | Schottky | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500mV @ 3A | 40V | -65°C ~ 150°C | Military, MIL-PRF-19500/620 | ||||||||
| JANTX1N5811URS | DIODE GEN PURP 150V 3A BPKG | Microchip Technology | SQ-MELF, B | 3A | Standard | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 150V | 60pF @ 10V, 1MHz | 875mV @ 4A | 150V | 30ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | |||||
| JANTX1N6309DUS | DIODE ZENER 2.4V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±1% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 2.4V | 30 Ohms | 100µA @ 1V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| 1N6334US | DIODE ZENER 27V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±5% | B, SQ-MELF | -65°C ~ 175°C | 500mW | 27V | 27 Ohms | 50nA @ 21V | 1.4V @ 1A | ||||||||
| JAN1N6355DUS | ZENER DIODE | Microchip Technology | SQ-MELF, B | Surface Mount | ±1% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 200V | 1800 Ohms | 50 nA @ 152 V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JAN1N6328US | DIODE ZENER 15V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±5% | B, SQ-MELF | -65°C ~ 175°C | 500mW | 15V | 10 Ohms | 50nA @ 11V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JANS1N6327CUS/TR | VOLTAGE REGULATOR | Microchip Technology | SQ-MELF, B | Surface Mount | ±2% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 13V | 8 Ohms | 50nA @ 9.9V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JANTXV1N6325DUS | DIODE ZENER 11V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±1% | B, SQ-MELF | -65°C ~ 175°C | 500mW | 11V | 7 Ohms | 1µA @ 8.5V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JANS1N5550US | RECTIFIER DIODE | Microchip Technology | SQ-MELF, B | 3A | Standard | Surface Mount | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 1.2V @ 9A | 200V | 2µs | -65°C ~ 175°C | Military, MIL-PRF-19500/420 | |||||||
| JANS1N6321DUS | ZENER DIODE | Microchip Technology | SQ-MELF, B | Surface Mount | ±1% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 7.5V | 4 Ohms | 2µA @ 5V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JANTX1N5811US | DIODE GEN PURP 150V 3A B-MELF | Microchip Technology | SQ-MELF, B | 3A | Standard | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 150V | 60pF @ 10V, 1MHz | 875mV @ 4A | 150V | 30ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | |||||
| JANS1N6310CUS | DIODE ZENER 2.7V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±2% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 2.7V | 30 Ohms | 60µA @ 1V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
| JANTX1N5415US | DIODE GEN PURP 50V 3A B-MELF | Microchip Technology | SQ-MELF, B | 3A | Standard | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 1.5V @ 9A | 50V | 150ns | -65°C ~ 175°C | Military, MIL-PRF-19500/411 | ||||||
| 1N6642USE3/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | SQ-MELF, B | 300mA | Standard | Surface Mount | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 5pF @ 0V, 1MHz | 1.2V @ 100mA | 75V | 5ns | -65°C ~ 175°C | ||||||
| JANTXV1N6320CUS | DIODE ZENER 6.8V 500MW MELF | Microchip Technology | SQ-MELF, B | Surface Mount | ±2% | B, SQ-MELF | -65°C ~ 175°C (TJ) | 500mW | 6.8V | 3 Ohms | 2µA @ 4V | 1.4V @ 1A | Military, MIL-PRF-19500/533 |
- 10
- 15
- 50
- 100