Diodes Microchip Technology B, SQ-MELF

Diodes - RF 0
Diodes - Rectifiers - Arrays 130
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 480
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 610

JANS1N5822US/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/620
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction: -65°C ~ 150°C
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JANTX1N5811URS

DIODE GEN PURP 150V 3A BPKG

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N6309DUS

DIODE ZENER 2.4V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 100µA @ 1V
- Tolerance: ±1%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 2.4V
- Impedance (Max) (Zzt): 30 Ohms
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1N6334US

DIODE ZENER 27V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 50nA @ 21V
- Tolerance: ±5%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 27V
- Impedance (Max) (Zzt): 27 Ohms
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JAN1N6355DUS

ZENER DIODE

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 50 nA @ 152 V
- Tolerance: ±1%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 200V
- Impedance (Max) (Zzt): 1800 Ohms
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JAN1N6328US

DIODE ZENER 15V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 50nA @ 11V
- Tolerance: ±5%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 15V
- Impedance (Max) (Zzt): 10 Ohms
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JANS1N6327CUS/TR

VOLTAGE REGULATOR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 50nA @ 9.9V
- Tolerance: ±2%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 13V
- Impedance (Max) (Zzt): 8 Ohms
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JANTXV1N6325DUS

DIODE ZENER 11V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 1µA @ 8.5V
- Tolerance: ±1%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 11V
- Impedance (Max) (Zzt): 7 Ohms
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JANS1N5550US

RECTIFIER DIODE

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/420
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Operating Temperature - Junction: -65°C ~ 175°C
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JANS1N6321DUS

ZENER DIODE

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 2µA @ 5V
- Tolerance: ±1%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 7.5V
- Impedance (Max) (Zzt): 4 Ohms
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JANTX1N5811US

DIODE GEN PURP 150V 3A B-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANS1N6310CUS

DIODE ZENER 2.7V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 60µA @ 1V
- Tolerance: ±2%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 2.7V
- Impedance (Max) (Zzt): 30 Ohms
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JANTX1N5415US

DIODE GEN PURP 50V 3A B-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/411
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 50V
- Operating Temperature - Junction: -65°C ~ 175°C
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1N6642USE3/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N6320CUS

DIODE ZENER 6.8V 500MW MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/533
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Current - Reverse Leakage @ Vr: 2µA @ 4V
- Tolerance: ±2%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 6.8V
- Impedance (Max) (Zzt): 3 Ohms
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