-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
JANS1N6329C | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±2% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 16V | 12 Ohms | 50nA @ 12V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANS1N6347 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 91V | 270 Ohms | 50nA @ 69V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANS1N6341 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 51V | 85 Ohms | 50nA @ 39V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANS1N4979 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 5W | 75V | 55 Ohms | 2µA @ 56V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | |||||||
JANS1N6326 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 12V | 7 Ohms | 1µA @ 9V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANS1N4974 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 5W | 47V | 25 Ohms | 2µA @ 35.8V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | |||||||
JANS1N6637 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 5W | 5.1V | 1.5 Ohms | 5µA @ 1V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | |||||||
JANTXV1N6355D | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±1% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 200V | 1800 Ohms | 50 nA @ 152 V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANTXV1N6314 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 3.9V | 23 Ohms | 2µA @ 1V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANTXV1N6328 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 15V | 10 Ohms | 50nA @ 11V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
UES1304/TR | RECTIFIER UFR,FRR | Microchip Technology | B, Axial | 5A | Standard | Through Hole | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.25V @ 3A | 200V | 50ns | -55°C ~ 150°C | ||||||||
JANTX1N6634 | RECTIFIER | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 5W | 3.9V | 2 Ohms | 175µA @ 1V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | |||||||
JANTX1N6329 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 500mW | 16V | 12 Ohms | 50nA @ 12V | 1.4V @ 1A | Military, MIL-PRF-19500/533 | |||||||
JANS1N4960 | ZENER DIODE | Microchip Technology | B, Axial | Through Hole | ±5% | B, Axial | -65°C ~ 175°C (TJ) | 5W | 12V | 2.5 Ohms | 10µA @ 9.1V | 1.5V @ 1A | Military, MIL-PRF-19500/356 | |||||||
1N5809E3 | RECTIFIER DIODE | Microchip Technology | B, Axial | 6A | Standard | Through Hole | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 875mV @ 4A | 100V | 30ns | -65°C ~ 175°C |
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