-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UM4301B | SI PPIN HERMETIC GLASS AXIAL | Microchip Technology | Axial | 100V | PIN - Single | Axial | 2.2pF @ 100V, 1MHz | 10W | 1.5Ohm @ 100mA, 100MHz | |||||||||||||||
| UM9604 | RF DIODE PIN 400V 1.5W AXIAL | Microchip Technology | Axial | 400V | PIN - Single | Axial | -65°C ~ 175°C (TJ) | 100mA | 1.2pF @ 100V, 1MHz | 1.5W | 600mOhm @ 100mA, 100MHz | |||||||||||||
| UM4310A | SI PPIN HERMETIC SEAL | Microchip Technology | Axial | 1000V | PIN - Single | Axial | 2.2pF @ 100V, 1MHz | 20 W | 1.5Ohm @ 100mA, 100MHz | |||||||||||||||
| UM6201A | SI PPIN HERMETIC SEAL | Microchip Technology | Axial | 100V | PIN - Single | Axial | 1.1pF @ 100V, 1MHz | 6W | 400mOhm @ 100mA, 100MHz | |||||||||||||||
| UM7006B | SI PPIN HERMETIC GLASS AXIAL | Microchip Technology | Axial | 600V | PIN - Single | Axial | -65°C ~ 175°C | 0.9pF @ 100V, 1MHz | 5.5 W | 1Ohm @ 100mA, 100MHz | ||||||||||||||
| UM7102A | SI PPIN HERMETIC SEAL | Microchip Technology | Axial | 200V | PIN - Single | Axial | -65°C ~ 175°C | 1.2pF @ 100V, 1MHz | 10W | 600mOhm @ 100mA, 100MHz | ||||||||||||||
| JANTXV1N5188 | DIODE GEN PURP 400V 3A AXIAL | Microchip Technology | B, Axial | 3A | Standard | Through Hole | Axial | Standard Recovery >500ns, > 200mA (Io) | 2µA @ 400V | 1.5V @ 9A | 400V | -65°C ~ 175°C | Military, MIL-PRF-19500/297 | |||||||||||
| UM6610B | SI PPIN HERMETIC GLASS AXIAL | Microchip Technology | Axial | 1000V | PIN - Single | Axial | 0.4pF @ 100V, 1MHz | 2.5W | 2.5Ohm @ 100mA, 100MHz | |||||||||||||||
| JAN1N5190/TR | RECTIFIER UFR,FRR | Microchip Technology | B, Axial | 3A | Standard | Through Hole | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 600V | 1.5V @ 9A | 600V | 400ns | -65°C ~ 175°C | Military, MIL-PRF-19500/420 | ||||||||||
| JANTXV1N5186 | DIODE GEN PURP 100V 3A AXIAL | Microchip Technology | B, Axial | 3A | Standard | Through Hole | Axial | Standard Recovery >500ns, > 200mA (Io) | 2µA @ 100V | 1.5V @ 9A | 100V | -65°C ~ 175°C | Military, MIL-PRF-19500/424 | |||||||||||
| JANTX1N6620 | DIODE GEN PURP 220V 2A AXIAL | Microchip Technology | A, Axial | 2A | Standard | Through Hole | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 220V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 220V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |||||||||
| UMX4001B/TR | SI PPIN HERMETIC GLASS AXIAL | Microchip Technology | Axial | Axial | ||||||||||||||||||||
| 1N4721 | STANDARD RECTIFIER | Microchip Technology | Axial | 3A | Standard | Through Hole | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1V @ 3A | 200V | -65°C ~ 175°C | |||||||||||||
| 1N5823 | 5A SCHOTTKY RECTIFIER | Microchip Technology | Axial | 5A | Schottky | Through Hole | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 470 mV @ 15.7 A | 20V | -65°C ~ 125°C | |||||||||||||
| UM6010A | SI PPIN HERMETIC SEAL | Microchip Technology | Axial | Axial |
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