-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UES1102E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 975mV @ 2A | 100V | 25ns | 175°C | |||||||
| JANTXV1N6074/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | ||||||
| UES1101 | RECTIFIER | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 975mV @ 2A | 50V | 25ns | -55°C ~ 175°C | ||||||||
| UES1103E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 975mV @ 2A | 150V | 25ns | 175°C | |||||||
| JANTXV1N6074 | DIODE GEN PURP 100V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | ||||||
| JANS1N5620/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 400V | 1.6V @ 3A | 800V | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | |||||||
| UES1104HR2/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.25V @ 1A | 200V | 50ns | |||||||||
| 1N6622E3 | ZENER DIODE | Microchip Technology | A, Axial | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 2A | 30ns | ||||||||||||
| JANS1N5802URS | RECTIFIER DIODE | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | ||||||
| 1N5806E3/TR | UFR,FRR | Microchip Technology | A, Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 150V | 25ns | -65°C ~ 175°C | ||||||
| 1N5615E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 45pF @ 12V, 1MHz | 1.6V @ 3A | 200V | 150ns | -65°C ~ 175°C | ||||||
| UES1101SME3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 50V | 975mV @ 2A | 50V | 25ns | 175°C | |||||||
| JAN1N5616/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | 400V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||||||
| JANS1N5622 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 1000V | 1.3V @ 3A | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | |||||||
| JANS1N5619 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 600V | 250ns | -65°C ~ 200°C | Military, MIL-PRF-19500/429 |
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