-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UES1102E3 | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 975mV @ 2A | 100V | 25ns | 175°C | |||||||
JANS1N6621 | RECTIFIER DIODE | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 400V | 45ns | -65°C ~ 175°C | Military, MIL-PRF-19500/585 | |||||
JANTX1N4942 | DIODE GEN PURP 200V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 1.3V @ 1A | 200V | 150ns | -65°C ~ 175°C | Military, MIL-PRF-19500/359 | ||||||
1N6625E3 | DIODE GEN PURP 1.1KV 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 1.95V @ 1.5A | 1100V | 80ns | -65°C ~ 150°C | |||||||
JANS1N5618 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | 600V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||||||
UES1102/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 975mV @ 2A | 100V | 25ns | -55°C ~ 175°C | |||||||
1N6622E3/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 2A | 30ns | ||||||||||||
1N6536 | DIODE GEN PURP 400V 1A A AXIAL | Microchip Technology | A, Axial | 1A (DC) | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 400V | 1.5V @ 1A | 400V | 30ns | ||||||||
1N5619E3/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 400V | 25pF @ 12V, 1MHz | 1.6V @ 3A | 600V | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | ||||||
1N5617E3/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 35pF @ 12V, 1MHz | 800mV @ 3A | 400V | 150ns | -65°C ~ 175°C | ||||||
UZ8833 | VOLTAGE REGULATOR | Microchip Technology | Axial | Through Hole | ±10% | A, Axial | -65°C ~ 175°C | 1W | 33V | 45 Ohms | 500nA @ 25.1V | |||||||||
UES1003/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 975mV @ 1A | 150V | 25ns | -55°C ~ 175°C | ||||||||
UES1106HR2 | RECTIFIER | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.25V @ 1A | 400V | 50ns | |||||||||
UES1103E3 | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 975mV @ 2A | 150V | 25ns | 175°C | |||||||
UES1102 | RECTIFIER | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 975mV @ 2A | 100V | 25ns | -55°C ~ 175°C |
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