Semiconductors, Diodes Micro Commercial Co DO-214AC (SMAE)

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 19
  • GS1JE-TP
    DIODE GEN PURP 600V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 600V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • RM1800E-TP
    DIODE GEN PURP 1.8KV 500MA DO214
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1800V
    • Current - Average Rectified (Io): 500mA
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 1800V
    • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • ES1AE-TP
    DIODE GEN PURP 50V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • GS1GE-TP
    DIODE GEN PURP 400V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 400V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • GS1KE-TP
    DIODE GEN PURP 800V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 800V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • ES1ME-TP
    DIODE GEN PURP 1KV 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 100ns
    • Current - Reverse Leakage @ Vr: 5µA @ 1000V
    • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • GS1DE-TP
    DIODE GEN PURP 200V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 200V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • US1JE-TP
    DIODE GEN PURP 600V 1A SMAE
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • GS1ME-TP
    DIODE GEN PURP 1KV 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 1000V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • RM1200E-TP
    DIODE GEN PURP 1.2KV 500MA DO214
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 500mA
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 1200V
    • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • ES1BE-TP
    DIODE GEN PURP 100V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • ES1GE-TP
    DIODE GEN PURP 400V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 5µA @ 400V
    • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • GS1BE-TP
    DIODE GEN PURP 100V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • ES1DE-TP
    DIODE GEN PURP 200V 1A DO214AC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 5µA @ 200V
    • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
    • Operating Temperature - Junction: -50°C ~ 150°C
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  • RM1500E-TP
    DIODE GEN PURP 1.5KV 500MA DO214
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AC, SMA
    • Supplier Device Package: DO-214AC (SMAE)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1500V
    • Current - Average Rectified (Io): 500mA
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 5µA @ 1500V
    • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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